KSE800/801/802/803
KSE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h
FE
= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to KSE700/701/702/703
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
: KSE800/801
: KSE802/803
: KSE800/801
: KSE802/803
Value
60
80
60
80
5
4
0.1
40
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
R1
R2
E
B
Equivalent Circuit
C
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: KSE800/801
: KSE802/803
Collector Cut-off Current
: KSE800/801
: KSE802/803
Collector Cut-off Current
Test Condition
I
C
= 50mA, I
B
= 0
Min.
60
80
100
100
100
500
2
750
750
100
2.5
2.8
3
2.5
2.5
3
V
V
V
V
V
V
Max.
Units
V
V
µA
µA
µA
µA
mA
I
CEO
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100°C
V
BE
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
CBO
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
: KSE800/802
: KSE801/803
: ALL DEVICES
V
CE
(sat)
Collector-Emitter Saturation Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
Base-Emitter ON Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
V
BE
(on)
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
KSE800/801/802/803
Typical Characteristics
5
10000
A
I
B
= 500
µ
V
CE
= 3V
I
C
(A),COLLECTOR CURRENT
4
I
B
= 350
µ
A
3
h
FE
, DC CURRENT GAIN
5
I
B
= 450
µ
A
I
B
= 400
µ
A
I
B
= 300
µ
A
I
B
= 250
µ
A
I
B
= 200
µ
A
1000
I
B
= 150
µ
A
I
B
= 100
µ
A
2
100
1
I
B
= 50
µ
A
0
0
1
2
3
4
10
0.01
0.1
1
10
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
100
1000
I
C
= 500 I
B
f=0.1MHZ
I
E
=0
C
ob
[pF], CAPACITANCE
10
100
V
BE
(sat)
1
10
V
CE
(sat)
0.1
0.01
0.1
1
10
1
0.01
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
60
50
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
1000
10
40
10
0
µ
s
1m
s
5m
s
D
.C
.
30
1
20
KSE800/801
KSE802/803
0.1
1
10
100
10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
KSE800/801/802/803
Package Demensions
TO-126
±0.10
3.90
8.00
±0.30
3.25
±0.20
14.20MAX
ø3.20
±0.10
11.00
±0.20
(1.00)
0.75
±0.10
1.60
±0.10
0.75
±0.10
±0.30
(0.50)
1.75
±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
13.06
16.10
±0.20
0.50
–0.05
+0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
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Bottomless™
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DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
