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KSH30TF

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:  

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DPAK
包装说明
DPAK-3
针数
3
制造商包装代码
3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
最大集电极电流 (IC)
1 A
集电极-发射极最大电压
40 V
配置
SINGLE
最小直流电流增益 (hFE)
15
JEDEC-95代码
TO-252
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
15 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
3 MHz
Base Number Matches
1
文档预览
KSH30/30C
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP30 and TIP30C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSH30
: KSH30C
V
CEO
Collector-Emitter Voltage
: KSH30
: KSH30C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (Ta=25°C)
T
J
T
STG
Junction Temperature
Storage Temperature
- 40
- 100
- 40
- 100
-5
-1
-3
- 0.4
15
1.56
150
- 65 ~ 150
V
V
V
V
V
A
A
A
W
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: KSH30
: KSH30C
Collector Cut-off Current
: KSH30
: KSH30C
I
CES
Collector Cut-off Current
: KSH30
: KSH30C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= - 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
C
= - 1A, I
B
= - 125mA
V
CE
= - 4A, I
C
= - 1A
V
CE
= - 10V, I
C
= - 200mA
3
40
15
- 20
- 20
-1
75
- 0.7
- 1.3
V
V
MHz
µA
µA
mA
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 50
- 50
µA
µA
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 40
- 100
Max.
Units
V
V
I
CEO
* Pulse Test: PW≤300ms, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
KSH30/30C
Typical Characteristics
1000
10
V
CE
= 2V
I
C
=10I
B
h
FE
, DC CURRENT GAIN
t
R
, t
D
[
µ
s],TURN ON TIME
100
1
t
R
, V
CC
= - 30V
t
R
, V
CC
= - 10V
0.1
10
t
D
, V
BE
(off)=2V
1
-0.01
-0.1
-1
-10
0.01
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Turn On Time
10
-100
I
C
=10I
B
t
STG
1
I
C
[A], COLLECTOR CURRENT
t
F
, t
STG
[
µ
s],TURN OFF TIME
-10
t
F
, V
CC
= - 30V
-1
1m
DC
10
0
µ
s
50
0
µ
s
s
t
F
, V
CC
= - 10V
0.1
-0.1
0.01
-0.01
-0.1
-1
-10
-0.01
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Turn Off Time
Figure 4. Safe Operating Area
20
P
C
[W], POWER DISSIPATION
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
KSH30C
KSH30
Rev. B3, October 2002
KSH30/30C
Package Dimensions
D-PAK
6.60
±0.20
5.34
±0.30
(0.50)
(4.34)
(0.50)
0.70
±0.20
2.30
±0.10
0.50
±0.10
0.60
±0.20
6.10
±0.20
2.70
±0.20
9.50
±0.30
0.91
±0.10
0.80
±0.20
MAX0.96
2.30TYP
[2.30±0.20]
0.76
±0.10
2.30TYP
[2.30±0.20]
0.89
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(0.70)
(0.90)
(0.10)
(3.05)
6.10
±0.20
9.50
±0.30
2.70
±0.20
(2XR0.25)
0.76
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
(1.00)
6.60
±0.20
(5.34)
(5.04)
(1.50)
MIN0.55
KSH30/30C
Package Dimensions
(Continued)
I-PAK
6.60
±0.20
5.34
±0.20
(0.50)
(4.34)
(0.50)
0.50
±0.10
2.30
±0.20
0.60
±0.20
0.70
±0.20
0.80
±0.10
6.10
±0.20
1.80
±0.20
MAX0.96
0.76
±0.10
9.30
±0.30
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50
±0.10
©2002 Fairchild Semiconductor Corporation
16.10
±0.30
Dimensions in Millimeters
Rev. B3, October 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST
®
FASTr™
CoolFET™
CROSSVOLT™
FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
2
CMOS™
E
HiSeC™
EnSigna™
I
2
C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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