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KSH45H11TM_NL

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
TO-252
包装说明
SMALL OUTLINE, R-PSSO-G2
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最大集电极电流 (IC)
8 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
40
JEDEC-95代码
TO-252
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
20 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
40 MHz
文档预览
KSH45H11
KSH45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 80
-5
-8
- 16
20
1.75
150
- 55 ~ 150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10A, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
40
230
135
500
100
60
40
-1
- 1.5
V
V
MHz
pF
ns
ns
ns
Min.
- 80
Typ.
Max.
- 10
- 50
Units
V
µA
µA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH45H11
Typical Characteristics
1000
-100
V
CE
= -1V
I
C
[A], COLLECTOR CURRENT
I
CP
(max)
-10
10
h
FE
, DC CURRENT GAIN
100
I
C
(max)
DC
50
0
µ
1m
5m
s
0
µ
s
s
s
-1
10
-0.1
1
-0.01
-0.01
-0.1
-1
-10
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC current Gain
Figure 2. Safe Operating Area
25
P
C
[W], POWER DISSIPATION
20
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH45H11
Package Dimensions
D-PAK
6.60
±0.20
5.34
±0.30
(0.50)
(4.34)
(0.50)
0.70
±0.20
2.30
±0.10
0.50
±0.10
0.60
±0.20
6.10
±0.20
2.70
±0.20
9.50
±0.30
0.91
±0.10
0.80
±0.20
MAX0.96
2.30TYP
[2.30±0.20]
0.76
±0.10
2.30TYP
[2.30±0.20]
0.89
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(0.70)
(0.90)
(0.10)
(3.05)
6.10
±0.20
9.50
±0.30
2.70
±0.20
(2XR0.25)
0.76
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
(1.00)
6.60
±0.20
(5.34)
(5.04)
(1.50)
MIN0.55
KSH45H11
Package Dimensions
(Continued)
I-PAK
6.60
±0.20
5.34
±0.20
(0.50)
(4.34)
(0.50)
0.50
±0.10
2.30
±0.20
0.60
±0.20
0.70
±0.20
0.80
±0.10
6.10
±0.20
1.80
±0.20
MAX0.96
0.76
±0.10
9.30
±0.30
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50
±0.10
©2002 Fairchild Semiconductor Corporation
16.10
±0.30
Dimensions in Millimeters
Rev. A4, October 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST
®
FASTr™
CoolFET™
CROSSVOLT™
FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
2
CMOS™
E
HiSeC™
EnSigna™
I
2
C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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