KSP05/06
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= KSP05: 60V
KSP06: 80V
• Collector Dissipation: P
C
(max)=625mW
• Complement to KSP55/56
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector Base Voltage
: KSP05
: KSP06
V
CEO
Collector-Emitter Voltage
: KSP05
: KSP06
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
60
80
4
500
625
150
-55~150
V
V
V
mA
mW
°C
°C
60
80
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: KSP05
: KSP06
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP05
: KSP06
I
CEO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CE
=60V, I
B
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=2V, I
C
=10mA
f=100MHz
100
50
50
0.25
1.2
V
V
MHz
0.1
0.1
0.1
µA
µA
µA
Test Condition
I
C
=1mA, I
B
=0
Min.
60
80
I
E
=100µA, I
C
=0
4
Max.
Units
V
V
V
BV
EBO
I
CBO
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP05/06
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
1
10
100
1000
0.01
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
1000
V
CE
= 1V
V
CE
= 2V
I
C
[
µ
A], COLLECTOR CURRENT
100
100
10
1
0.0
10
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP05/06
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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intended to be an exhaustive list of all such trademarks.
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2
CMOS™
E
HiSeC™
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I
2
C™
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®
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®
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®
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
