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KSR1206BU

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Fairchild
零件包装代码
TO-92S
包装说明
IN-LINE, R-PSIP-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
68
JESD-30 代码
R-PSIP-T3
JESD-609代码
e0
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.3 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
KSR1206
KSR1206
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=10KΩ, R
2
=47KΩ)
• Complement to KSR2206
1
TO-92S
1.Emitter 2. Collector 3. Base
Equivalent Circuit
C
R1
B
R2
NPN Epitaxial Silicon Transistor
E
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
50
10
100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
=10µA, I
E
=0
I
C
=100µA, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=10mA, I
C
=5mA
V
CE
=5V, I
C
=100µA
V
CE
=0.3V, I
C
=1A
7
0.19
10
0.21
0.3
1.4
13
0.24
3.7
250
68
0.3
V
pF
MHz
V
V
KΩ
Min.
50
50
0.1
Typ.
Max.
Units
V
V
µA
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSR1206
Typical Characteristics
1000
100
V
CE
= 5V
R
1
= 10K
R
2
= 47K
V
CE
=0.3V
R
1
= 10K
R
2
= 47K
V
I
(on)[V], INPUT VOLTAGE
h
FE
, DC CURRENT GAIN
100
10
10
1
1
0.1
1
10
100
0.1
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
10k
400
I
C
[
µ
A], COLLECTOR CURRENT
P
C
[mW], POWER DISSIPATION
V
CE
= 5V
R
1
= 10K
R
2
= 47K
1k
350
300
250
100
200
150
10
100
50
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
25
50
o
75
100
125
150
175
V
I
(OFF)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSR1206
Package Demensions
TO-92S
4.00
±0.20
2.31
±0.20
0.66 MAX.
(1.10)
0.49
±0.10
1.27TYP
[1.27±0.20]
3.72
±0.20
1.27TYP
[1.27±0.20]
14.47
±0.30
3.70
±0.20
0.35
–0.05
+0.10
2.86
±0.20
0.77
±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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Switching Application (Bias Resister Built
Markets and
In)
applications
New products
q
Switchng circuit, Inverter, Interface
Product selection and
circuit, Driver Circuit
parametric search
q
Built in bias Resistor (R =10KΩ,
1
Cross-reference
R
2
=47KΩ)
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Complement to KSR2206
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Product status/pricing/packaging
Product
KSR1206BU
KSR1206TA
Product status
Full Production
Full Production
Pricing*
$0.053
$0.053
Package type
TO-92S
TO-92S
Leads
3
3
Packing method
BULK
TAPE REEL
Product Folders and
Datasheets
Related Links
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Dotted line
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(PCNs)
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Application
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Datasheet
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参数对比
与KSR1206BU相近的元器件有:KSR1206TA。描述及对比如下:
型号 KSR1206BU KSR1206TA
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN
是否Rohs认证 不符合 不符合
厂商名称 Fairchild Fairchild
零件包装代码 TO-92S TO-92S
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
针数 3 3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC) 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 68 68
JESD-30 代码 R-PSIP-T3 R-PSIP-T3
JESD-609代码 e0 e0
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.3 W 0.3 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz
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