SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY
VIDEO OUTPUT APPLICATION.
FEATURES
High Voltage : V
CEO
=-200V.
High Transition Frequency : f
T
=150MHz(Typ.).
Low Collector Output Capacitance : C
ob
=2.6pF(Typ.).
Complementary to KTC3467.
C
P
DEPTH:0.2
KTA1070
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
A
S
Q
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
G
J
F
F
H
M
E
M
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
j
T
stg
RATING
-200
-200
-5
-100
-200
1
150
-55 150
UNIT
V
V
V
mA
W
O
H
R
H
1
N
2
3
N
H
1. EMITTER
2. COLLECTOR
3. BASE
25
1.25
Φ1.50
0.10 MAX
_
12.50 + 0.50
1.00
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Reverse Transfer Capacitance
Note : h
FE
Classification
0:70 140 , Y:120
240
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
C
re
TEST CONDITION
V
CB
=-150V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-1mA, I
B
=0
V
CE
=-5V, I
C
=-10mA
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
V
CE
=-30V, I
C
=-10mA
V
CB
=-30V, I
E
=0, f=1MHz
V
CB
=-30V, I
E
=0, f=1MHz
MIN.
-
-
-200
70
-
-
-
-
-
TYP.
-
-
-
-
-
-
150
2.6
1.7
MAX.
-0.1
-0.1
-
240
-0.6
-1.0
-
-
-
UNIT
A
A
V
-
V
V
MHz
pF
pF
1999. 11. 30
Revision No : 1
D
1/3
KTA1070
I
C
- V
CE
-20
COLLECTOR CURRENT I
C
(mA)
-16
-12
I
B
=-60µA
I
C
- V
BE
-120
COLLECTOR CURRENT I
C
(mA)
-100
-80
-60
-40
-20
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
Ta=25
C
Ta=-25
C
I
B
=-120µA
I
B
=-100µA
I
B
=-80µA
COMMON EMITTER
V
CE
=-10V
-4
0
0
-2
I
B
=-20µA
COMMON EMITTER
Ta=25 C
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BASE-EMITTER VOLTAGE V
BE
(V)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1k
DC CURRENT GAIN h
FE
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
V
CE
=-5V
V
CE(sat)
- I
C
-5
-3
COMMON EMITTER
I
C
/I
B
=10
Ta=25 C
-1
-0.5
-0.3
100
50
30
-0.1
-0.05
-0.5
-1
-3
-10
-30
-100
10
-0.5
-1
-3
-10
-30
-100
-200
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE(sat)
- I
C
TRANSITION FREQUENCY f
T
(MHz)
-10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
-5
-3
COMMON EMITTER
I
C
/I
B
=10
Ta=25 C
f
T
- I
C
1k
500
300
COMMON EMITTER
V
CE
=-30V
Ta=25 C
100
50
30
-1
-0.5
-0.3
-0.5
-1
-3
-10
-30
-100
-200
10
-0.5
-1
-3
-10
Ta=75
-8
I
B
=-40µA
C
-30
-100
-200
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
1999. 11. 30
Revision No : 1
2/3
KTA1070
C
ob
- V
CB
REVERSE TRANSFER CAPACITANCE
C
re
(pF)
OUTPUT CAPACITANCED C
ob
(pF)
10
5
3
I
E
=0
f=1MHz
Ta=25 C
C
re
- V
CB
10
5
3
I
E
=0
f=1MHz
Ta=25 C
1
0.5
0.3
-0.7
-1
-3
-10
-30
-100
1
0.5
0.3
-0.7
-1
-3
-10
-30
-100
COLLECTOR-BASE VOLTAGE V
CB
(V)
COLLECTOR-BASE VOLTAGE V
CB
(V)
SAFE OPERATING AREA
-300
Pc - Ta
COLLECTOR CURRENT I
C
(mA)
COLLECTOR POWER DISSIPATION
P
C
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
-100
-50
-30
I
C
MAX(PULSED)*
S
0
µ
50
S
1m
I
C
MAX(CONTINUOUS)
DC
10
m
S
*
*
*
OP
ER
AT
I
ON
-10
-5
-2
-5
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-10
-30
-50
-100
-300
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999. 11. 30
Revision No : 1
3/3
RF/无线
