SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION.
FEATURES
ϒ⁄Excellent
h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
・Low
Noise : NF=1dB(Typ.), 10dB(Max.).
・Complementary
to KTC3199.
KTA1267
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
150
400
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA, f=1kHz, Rg=10kΩ
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4.0
1.0
MAX.
-0.1
-0.1
400
-0.3
-
7.0
10
V
MHz
pF
dB
UNIT
μ
A
μ
A
O:70½140 , Y:120½240 , GR:200½400
2002. 9. 12
Revision No : 2
1/2
KTA1267
2002. 9. 12
Revision No : 2
2/2