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KTC3198Y

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:KEC

厂商官网:http://www.keccorp.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
KEC
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW NOISE
最大集电极电流 (IC)
0.15 A
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
120
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.625 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
80 MHz
文档预览
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(2)=100(Typ.) at V
CE
=6V, I
C
=150mA
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.).
・Low
Noise : NF=1dB(Typ.). at f=1kHz.
・Complementary
to KTA1266.
KTC3198
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
*P
C
400
T
j
T
stg
150
-55½150
RATING
60
50
5
150
50
625
mW
UNIT
V
V
V
mA
mA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
h
FE
(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Base Intrinsic Resistance
Noise Figure
Note : h
FE
(1) Classification O:70½140,
V
CE(sat)
V
BE(sat)
f
T
C
ob
rbb’
NF
Y:120½240,
V
CE
=6V, I
C
=150mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
E
=1mA, f=30MHz
V
CE
=6V, I
C
=0.1mA, Rg=10kΩ, f=1kHz
GR:200½400, BL:300~700
25
-
-
80
-
-
-
100
0.1
-
-
2.0
50
1.0
-
0.25
1.0
-
3.5
-
10
V
V
MHz
pF
dB
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
MIN.
-
-
70
TYP.
-
-
-
MAX.
0.1
0.1
700
UNIT
μ
A
μ
A
2013. 7. 08
Revision No : 3
1/3
KTC3198
2013. 7. 08
Revision No : 3
2/3
KTC3198
2013. 7. 08
Revision No : 3
3/3
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参数对比
与KTC3198Y相近的元器件有:KTC3198BL、KTC3198-Y-AT/P、KTC3198-GR-AT/P、KTC3198GR、KTC3198O。描述及对比如下:
型号 KTC3198Y KTC3198BL KTC3198-Y-AT/P KTC3198-GR-AT/P KTC3198GR KTC3198O
描述 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN 额定功率:625mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN NPN,Vceo=50V,Ic=150mA,hfe=120~240 额定功率:625mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN NPN,Vceo=50V,Ic=150mA,hfe=200~400 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
厂商名称 KEC KEC - - KEC KEC
零件包装代码 TO-92 TO-92 - - TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 TO-92, 3 PIN - - CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
针数 3 3 - - 3 3
Reach Compliance Code unknown unknown - - unknown unknown
ECCN代码 EAR99 EAR99 - - EAR99 EAR99
其他特性 LOW NOISE LOW NOISE - - LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.15 A 0.15 A - - 0.15 A 0.15 A
集电极-发射极最大电压 50 V 50 V - - 50 V 50 V
配置 SINGLE SINGLE - - SINGLE SINGLE
最小直流电流增益 (hFE) 120 300 - - 200 70
JEDEC-95代码 TO-92 TO-92 - - TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 - - O-PBCY-T3 O-PBCY-T3
元件数量 1 1 - - 1 1
端子数量 3 3 - - 3 3
最高工作温度 150 °C 150 °C - - 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND - - ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL - - CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN - - NPN NPN
最大功率耗散 (Abs) 0.625 W 0.625 W - - 0.625 W 0.625 W
认证状态 Not Qualified Not Qualified - - Not Qualified Not Qualified
表面贴装 NO NO - - NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE - - THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM - - BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING - - SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON - - SILICON SILICON
标称过渡频率 (fT) 80 MHz 80 MHz - - 80 MHz 80 MHz
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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