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KTC3879S-Y

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:KEC

厂商官网:http://www.keccorp.com/

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器件参数
参数名称
属性值
厂商名称
KEC
零件包装代码
SOT-23
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.05 A
基于收集器的最大容量
3.2 pF
集电极-发射极最大电压
30 V
配置
SINGLE
最高频带
VERY HIGH FREQUENCY BAND
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
・High
Power Gain : G
pe
=29dB(Typ.) (f=10.7MHz)
KTC3879S
EPITAXIAL PLANAR NPN TRANSISTOR
L
E
B
L
2
3
1
MAXIMUM RATING (Ta=25℃)
Q
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
35
30
4
50
-50
150
150
-55½150
UNIT
C
N
P
P
V
V
V
mA
mA
mW
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
A
G
H
K
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h
FE
Rank
Type Name
Lot No.
R
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Collector-Base Time Constant
Power Gain
Note : h
FE
Classification
R:40½80,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
V
BE(sat)
f
T
C
ob
C
C
・rbb
G
pe
O:70½140,
TEST CONDITION
V
CB
=35V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
E
=-1mA, f=30MHz
V
CC
=6V, I
E
=-1mA, f=10.7MHz
MIN.
-
-
40
-
-
100
1.4
10
27
TYP.
-
-
-
-
-
-
2.0
-
29
MAX.
0.1
1.0
240
0.4
1.0
400
3.2
50
33
V
V
MHz
pF
pS
dB
UNIT
μ
A
μ
A
Y:120½240
2001. 2. 24
Revision No : 2
J
D
1/4
KTC3879S
y PARAMETERS (Typ.)
(1) (COMMON EMITTER f=455kHz, Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
V
CE
I
E
g
ie
C
ie
g
oe
C
oe
|y
fe
|
θ
fe
|y
re
|
θ
re
KTC3879S-R
6
-1
0.58
53
1.9
2.6
38
-0.79
5.7
-90
KTC3879S-O
6
-1
0.41
46
2.7
2.8
38
-0.83
5.7
-90
KTC3879S-Y
6
-1
0.26
38
4.8
3.6
38
-0.92
6.2
-90
UNIT
V
mA
mS
pF
μ
S
pF
mS
°
μ
S
°
(2) (COMMON EMITTER f=10.7MHz, Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
V
CE
I
E
g
ie
C
ie
g
oe
C
oe
|y
fe
|
θ
fe
|y
re
|
θ
re
KTC3879S-R
6
-1
1.04
49
10
2.7
37
-9.6
120
-90
KTC3879S-O
6
-1
0.85
43
15
2.9
37
-10.4
120
-90
KTC3879S-Y
6
-1
0.65
36
28
3.6
37
-11.5
140
-90
UNIT
V
mA
mS
pF
μ
S
pF
mS
°
μ
S
°
2001. 2. 24
Revision No : 2
2/4
KTC3879S
2001. 2. 24
Revision No : 3
3/4
KTC3879S
2001. 2. 24
Revision No : 3
4/4
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参数对比
与KTC3879S-Y相近的元器件有:KTC3879S-O、KTC3879S-R。描述及对比如下:
型号 KTC3879S-Y KTC3879S-O KTC3879S-R
描述 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
厂商名称 KEC KEC KEC
零件包装代码 SOT-23 SOT-23 SOT-23
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.05 A 0.05 A 0.05 A
基于收集器的最大容量 3.2 pF 3.2 pF 3.2 pF
集电极-发射极最大电压 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE
最高频带 VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1
端子数量 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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