LESHAN RADIO COMPANY, LTD.
Silicon PNP Epitaxial Planer
Transistor
L4401DW1T1
SC88
MAXIMUM RATINGS
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
JA
o
Symbol
V
CEO
V
CBO
V
EBO
IC
Ratings
-50
-60
-6
-150
Symbol
P
D
Unit
V
V
V
mAdc
Max
380
328
-55 to +150
Unit
mW
o
THERMAL CHARATEERISTICS
C
/
W
o
Tj ,Tstg
C
DEVICE MARKING
L4401DW1T1=5K
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Characteristic
Symbol
V(BR)CEO
V(BR)EBO
V(BR)CBO
Min
-50
-6
-60
Typ
-
-
-
Max
-
-
-
Unit
V
V
V
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
(IE=-50 A)
Collector-Base Breakdown Voltage
(IC=-50 A)
L4401DW1T1-1/2
LESHAN RADIO COMPANY, LTD.
Collector Cutoff Current
(VCB=-60V)
Emitter Cutoff Current (VBE=-6V)
ICBO
IEBO
-
-
-0.1
-0.1
A
A
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA, VCE=-6.0V)
Collector-Emitter Saturation Voltage
(IC=-50mA,IB=-5mA)
Hfe
120
-
560
VCE(SAT)
Ft
Cobo
-
-
-
-
140
4
-0.5
-
5
V
MHz
Pf
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE = -12.0V; IE =2.0 mA,f=300MHZ)
Output Capacitance(VCB=-12V,f=1.0MHz)
PACKAGE DIMENSIONS
SC-88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM
A
B
C
D
G
H
J
K
N
S
V
MIN
0.071
0.045
0.031
0.004
MAX
0.087
0.053
0.043
0.012
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
0.026BSC
–––
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
0.65BSC
–––
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
L4401DW1T1-2/2
安防电子
