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LBC848BPDW1T1G_15

Dual General Purpose Transistors

厂商名称:LRC

厂商官网:http://www.lrc.cn

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LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LBC846BPDW1T1G
LBC846BPDW1T3G
LBC847BPDW1T1G
LBC847BPDW1T3G
LBC847CPDW1T1G
LBC847CPDW1T3G
LBC848BPDW1T1G
LBC848BPDW1T3G
LBC848CPDW1T1G
LBC848CPDW1T3G
S-LBC846BPDW1T1G
S-LBC846BPDW1T3G
S-LBC847BPDW1T1G
S-LBC847BPDW1T3G
S-LBC847CPDW1T1G
S-LBC847CPDW1T3G
S-LBC848BPDW1T1G
S-LBC848BPDW1T3G
S-LBC848CPDW1T1G
S-LBC848CPDW1T3G
Marking
Shipping
3000 Units Reel
/
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
LBC846BPDW1T1G
LBC847BPDW1T1G
LBC847CPDW1T1G
LBC848BPDW1T1G
LBC848CPDW1T1G
S-LBC846BPDW1T1G
S-LBC847BPDW1T1G
S-LBC847CPDW1T1G
S-LBC848BPDW1T1G
S-LBC848CPDW1T1G
6
5
4
BB
BB
BF
BF
BG
BG
BK
BK
BL
BL
1
2
3
SOT-363/SC-88
CASE 419B STYLE 1
3
2
1
MAXIMUM RATINGS - NPN
Rating
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current Ð
Continuous
Symbol
VCEO
VCBO
VEBO
IC
LBC846 LBC847 LBC848
65
80
6.0
100
45
50
6.0
100
30
30
5.0
100
Unit
V
V
V
mAdc
Q
1
Q
2
4
5
6
DEVICE MARKING
MAXIMUM RATINGS - PNP
Rating
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current Ð
Continuous
Symbol
VCEO
VCBO
VEBO
IC
LBC846 LBC847 LBC848
Unit
V
V
V
mAdc
See Table
-
65
-
80
-
5.0
-
100
-
45
-
50
-
5.0
-
100
-
30
-
30
-
5.0
-
100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR
-
5 Board (1)
TA = 25˚C
Derate Above 25˚C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
1. FR
-
5 = 1.0 x 0.75 x 0.062 in
Symbol
PD
Max
380
250
Unit
mW
3.0
R
θJA
TJ, Tstg
328
-55 to +150
mW/˚C
˚C/W
˚C
Rev.O 1/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series
S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series
ELECTRICAL CHARACTERISTICS (NPN)
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)CES
LBC846 Series
LBC847B Only
LBC848 Series
V(BR)CBO
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)EBO
LBC846 Series
LBC847 Series
LBC848 Series
ICBO
6.0
6.0
5.0
15
5.0
nA
µA
80
50
30
V
80
50
30
V
65
45
30
V
V
Collector–Emitter Breakdown Voltage
(IC = 10
µA,
VEB = 0)
Collector–Base Breakdown Voltage
(IC = 10
mA)
Emitter–Base Breakdown Voltage
(IE = 1.0
mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mA, VCE = 5.0 V)
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
VCE(sat)
VBE(sat)
VBE(on)
hFE
200
420
580
290
520
0.7
0.9
660
475
800
0.25
0.6
700
770
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
fT
Cobo
NF
10
100
4.5
MHz
pF
dB
Rev.O 2/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series
S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series
ELECTRICAL CHARACTERISTICS (PNP)
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
V(BR)CEO
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)CES
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)CBO
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)EBO
LBC846 Series
LBC847 Series
LBC848 Series
ICBO
–5.0
–5.0
–5.0
–15
–4.0
nA
µA
–80
–50
–30
V
–80
–50
–30
V
–65
–45
–30
V
V
Collector–Emitter Breakdown Voltage
(IC = –10
µA,
VEB = 0)
Collector–Base Breakdown Voltage
(IC = –10
mA)
Emitter–Base Breakdown Voltage
(IE = –1.0
mA)
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current
(VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = –10
µA,
VCE = –5.0 V)
hFE
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
VCE(sat)
VBE(sat)
VBE(on)
–0.6
–0.75
–0.82
–0.7
–0.9
V
–0.3
–0.65
V
200
420
150
270
290
520
475
800
V
(IC = –2.0 mA, VCE = –5.0 V)
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
fT
Cob
NF
100
4.5
10
MHz
pF
dB
Rev.O 3/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series
S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series
TYPICAL NPN CHARACTERISTICS – LBC846
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
VBE @ VCE = 5.0 V
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TA = 25°C
1.6
20 mA
1.2
0.8
0.4
0
IC =
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
θ
VB for VBE
-55°C to 125°C
0.02
0.05
0.1
1.0 2.0
0.2
0.5
IB, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
1.0
10 20
5.0
IC, COLLECTOR CURRENT (mA)
2.0
50
100
200
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
TA = 25°C
C, CAPACITANCE (pF)
20
Cib
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
500
200
100
50
20
VCE = 5 V
TA = 25°C
10
6.0
4.0
Cob
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current–Gain – Bandwidth Product
Rev.O 4/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series
S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series
TYPICAL PNP CHARACTERISTICS — LB C846
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = -5.0 V
TA = 25°C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
TJ = 25°C
-0.8
-0.6
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.2
-0.5
-50 -100 -200
-1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
VBE(sat) @ IC/IB = 10
VBE @ VCE = -5.0 V
Figure 7. DC Current Gain
-2.0
-1.6
-1.2
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
-20
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-0.2
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VB for VBE
-55°C to 125°C
-0.5 -1.0
-50
-5.0 -10 -20
-2.0
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
TJ = 25°C
Cib
500
200
100
50
20
VCE = -5.0 V
C, CAPACITANCE (pF)
20
10
8.0
6.0
4.0
2.0
-0.1 -0.2
Cob
-0.5 -1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
Rev.O 5/9
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