LM158, LM258, LM358,
LM158A, LM258A, LM358A
Low-power dual operational amplifiers
Datasheet - production data
Related products
See LM158W for enhanced ESD ratings
See LM2904 and LM2904W for automotive
grade versions
Description
These circuits consist of two independent, high-
gain, internally frequency-compensated op amps,
specifically designed to operate from a single
power supply over a wide range of voltages. The
low-power supply drain is independent of the
magnitude of the power supply voltage.
Application areas include transducer amplifiers,
DC gain blocks and all the conventional op amp
circuits, which can now be more easily
implemented in single power supply systems. For
example, these circuits can be directly supplied
with the standard 5 V, which is used in logic
systems and will easily provide the required
interface electronics with no additional power
supply.
In linear mode, the input common-mode voltage
range includes ground and the output voltage can
also swing to ground, even though operated from
only a single power supply voltage.
Features
Frequency compensation implemented
internally
Large DC voltage gain: 100 dB
Wide bandwidth (unity gain): 1.1 MHz
(temperature compensated)
Very low supply current per channel
essentially independent of supply voltage
Low input bias current: 20 nA (temperature
compensated)
Low input offset voltage: 2 mV
Low input offset current: 2 nA
Input common-mode voltage range includes
negative rails
Differential input voltage range equal to the
power supply voltage
Large output voltage swing
0 V to (V
CC+
- 1.5 V)
November 2017
DocID2163 Rev 15
1/25
www.st.com
This is information on a product in full production.
Contents
LM158, LM258, LM358, LM158A, LM258A,
LM358A
Contents
1
2
3
4
5
6
7
Schematic diagram.......................................................................... 3
Package pin connections................................................................ 4
Absolute maximum ratings............................................................. 5
Electrical characteristics ................................................................ 7
Electrical characteristic curves ...................................................... 9
Typical applications ...................................................................... 13
Package information ..................................................................... 16
7.1
7.2
7.3
7.4
SO8 package information ................................................................ 17
MiniSO8 package information ......................................................... 18
DFN8 2x2 package information ....................................................... 19
TSSOP8 package information ......................................................... 21
8
9
Ordering information..................................................................... 22
Revision history ............................................................................ 23
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DocID2163 Rev 15
LM158, LM258, LM358, LM158A, LM258A,
LM358A
Schematic diagram
1
Schematic diagram
Figure 1: Schematic diagram (1/2 LM158)
V
CC
6
µ
A
4
µ
A
C
C
100µ
A
Q5
Q6
Inverting
input
Non-invertin
g
input
Q2
Q1
Q3
Q4
Q11
Output
Q7
R
SC
Q13
Q10
Q8
Q9
50
µ
A
GND
Q12
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Package pin
connections
LM158, LM258, LM358, LM158A, LM258A,
LM358A
2
Package pin connections
Figure 2: Pin connections (top view)
1.
The exposed pad of the DFN8 2x2 can be left floating or connected to ground
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DocID2163 Rev 15
LM158, LM258, LM358, LM158A, LM258A,
LM358A
Absolute maximum
ratings
3
Symbol
V
CC
V
i
V
id
Absolute maximum ratings
Table 1: Absolute maximum ratings
Parameter
Supply voltage
Input voltage
Differential input voltage
Output short-circuit duration
(1)
I
in
T
oper
T
stg
T
j
Input current
(2)
Operating free-air temperature range
Storage temperature range
Maximum junction temperature
SO8
R
thja
Thermal resistance junction to ambient
(3)
LM158,A
LM258,A
±16 or 32
-0.3 to 32
±32
Infinite
LM358,A
Unit
V
5 mA in DC or 50 mA in AC
(duty cycle = 10 %, T = 1 s)
-55 to 125
-40 to 105
-65 to 150
150
125
190
57
120
40
39
37
300
200
(6)
mA
0 to 70
°C
MiniSO8
DFN8 2x2
TSSOP8
SO8
°C/W
R
thjc
Thermal resistance junction to case
(4)
(3)
MiniSO8
TSSOP8
HBM: human body model
ESD
MM: machine model
(5)
V
kV
CDM: charged device model
Notes:
(1)
Short-circuits
(2)
This
1.5
from the output to V
CC
can cause excessive heating if V
CC
> 15 V. The maximum output current is approximately
40 mA independent of the magnitude of V
CC
. Destructive dissipation can result from simultaneous short circuits on all amplifiers.
input current only exists when the voltage at any of the input leads is driven negative. It is due to the collector-base junction
of the input PNP transistor becoming forward-biased and thereby acting as input diode clamp. In addition to this diode action,
there is NPN parasitic action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V
CC
voltage level (or to ground for a large overdrive) for the time during which an input is driven negative. This is not destructive and
normal output is restored for input voltages above -0.3 V.
(3)
Short-circuits
(4)
can cause excessive heating and destructive dissipation. R
th
are typical values.
Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor between
two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
(5)
Machine
model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device
with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations while the other
pins are floating.
(6)
Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly to
the ground through only one pin. This is done for all pins.
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