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LM6161E/883

Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CQCC20, LCC-20

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
厂商名称
Rochester Electronics
包装说明
QCCN,
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
6 µA
标称共模抑制比
80 dB
最大输入失调电压
10000 µV
JESD-30 代码
S-CQCC-N20
长度
8.89 mm
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
20
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
QCCN
封装形状
SQUARE
封装形式
CHIP CARRIER
筛选级别
MIL-STD-883
座面最大高度
1.905 mm
标称压摆率
300 V/us
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
MILITARY
端子形式
NO LEAD
端子节距
1.27 mm
端子位置
QUAD
标称均一增益带宽
50000 kHz
宽度
8.89 mm
文档预览
MICROCIRCUIT DATA SHEET
MNLM6161-X REV 2B1
HIGH SPEED OPERATIONAL AMPLIFIER
General Description
The LM6161 high-speed amplifier exhibits an excellent speed-power product in delivering
300 V/uS and 50 MHz unity gain stability with only 5 mA of supply current. Further, power
savings and application convenience are possible by taking advantage of the wide dynamic
range in operating supply voltage which extends all the way down to +5V.
This amplifier is built with National's VIP[TM] (Vertically Integrated PNP) process which
provides fast PNP transistors that are true complements to the already fast NPN devices.
This advanced junction-isolated process delivers high speed performance without the need
for complex and expensive dielectric isolation.
Original Creation Date: 08/03/95
Last Update Date: 09/04/02
Last Major Revision Date: 10/28/98
Industry Part Number
LM6161
NS Part Numbers
LM6161E/883
LM6161J-QMLV
LM6161J/883
LM6161W/883
LM6161WG-QMLV
LM6161WG/883
Prime Die
LM6161B
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Subgrp Description
1
2
3
4
5
6
7
8A
8B
9
10
11
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp (
o
C)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
Quality Conformance Inspection
MIL-STD-883, Method 5005
1
MNLM6161-X REV 2B1
MICROCIRCUIT DATA SHEET
Features
-
-
-
-
-
-
-
-
-
High slew rate
300V/uS
High unity gain freq
50MHz
Low supply current
5mA
Fast settling
120nS to 0.1%
Low differential gain
<0.1%
Low differential phase
0.1 degrees
Wide supply range
4.75V to 32V
Stable with unlimited capacitive load
Well behaved; easy to apply
CONTROLLING DOCUMENT:
LM6161E/883
5962-89621012A
LM6161J-QMLV
5962-8962101VPA
LM6161J/883
5962-8962101PA
LM6161W/883
5962-8962101HA
LM6161WG-QMLV
5962-8962101VXA
LM6161WG/883
5962-8962101XA
Applications
- Video amplifier
- High-frequency filter
- Wide-bandwidth signal conditioning
- Radar
- Sonar
2
MNLM6161-X REV 2B1
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage
(V+ - V-)
Differential Input Voltage Range
(Note 4)
Common-Mode Voltage Range
(Note 6)
(V+ - 0.7V) to (V- - 7V)
Output Short Circuit to Gnd
(Note 3)
Continuous
Power Dissipation
(Note 2)
400mW
Soldering Information
(Soldering, 10 seconds)
Storage Temperature Range
Maximum Junction Temperature
150 C
Thermal Resistance
ThetaJA
LCC
CERDIP
CERPAK
CERAMIC SOIC
ThetaJC
LCC
CERDIP
CERPAK
CERAMIC SOIC
ESD Tolerance
(Note 4, 5)
+500V
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Continuous short-circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 C.
In order to achieve optimum AC performance, the input stage was designed without
protective clamps. Exceeding the maximum differential input voltage results in
reverse breakdown of the base-emitter junction of one of the input transistors and
probable degradation of the input parameters (especially Vio, Iio and Noise).
The average voltage that the weakest pin combinations (those involving Pin 2 or Pin
3) can withstand and still conform to the datasheet limits. The test circuit used
consists of the human body model of 100pF in series with 1500 Ohms.
The voltage between V+ and either input pin must not exceed 36V.
260 C
-65 C to +150 C
36V
+8V
(Still Air)
(500LF/Min Air
(Still Air)
(500LF/Min Air
(Still Air)
(500LF/Min Air
(Still Air)
(500LF/Min Air
flow)
flow)
flow)
flow)
90
61
113
51
228
140
228
140
20
21
21
21
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
3
MNLM6161-X REV 2B1
MICROCIRCUIT DATA SHEET
Recommended Operating Conditions
(Note 1)
Temperature Range
-55 C < TA < +125 C
Supply Voltage Range
4.75V to 32V
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
4
MNLM6161-X REV 2B1
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +15V, Vcm = 0V, Rl > 100K Ohms, Rs = 10K Ohms.
SYMBOL
Vio
PARAMETER
Input Offset
Voltage
Input Bias
Current
Input Offset
Current
Positive
Common-Mode
Voltage Range
Vcc = +15V
CONDITIONS
NOTES
PIN-
NAME
MIN
-7
-10
Iib
-3
-6
Iio
-350
-800
+Vcmr
13.9
13.8
Vcc = +5V
2
2
-Vcmr
Negative
Common-Mode
Voltage Range
Vcc = +15V
3.9
3.8
-12.9
-12.7
Vcc = +5V
2
2
CMRR
Common-Mode
Rejection Ratio
Power Supply
Rejection Ratio
Output Short
Circuit Current
-12.9V < Vcm < 13.9V
-12.7V < Vcm < 13.8V
PSRR
+10V < Vcc < +16V
80
74
80
74
Ios
Source
-30
-20
Sink
30
20
Icc
Supply Current
6.5
6.8
Avs
Large Signal
Voltage Gain
Positive Voltage
Swing
Vout = +10V, Rl = 2K Ohms
1
1
+Vop
Vcc = +15V, Rl = 2K Ohms
550
300
13.5
13.3
Vcc = +5V, Rl = 2K Ohms
3.5
3.3
2.0
2.2
7
10
3
6
350
800
MAX
UNIT
mV
mV
uA
uA
nA
nA
V
V
V
V
V
V
V
V
dB
dB
dB
dB
mA
mA
mA
mA
mA
mA
V/V
V/V
V
V
V
V
SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
5
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参数对比
与LM6161E/883相近的元器件有:LM6161W/883、LM6161WG/883、LM6161J/883。描述及对比如下:
型号 LM6161E/883 LM6161W/883 LM6161WG/883 LM6161J/883
描述 Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CQCC20, LCC-20 Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDFP10, CERAMIC, DFP-10 Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDSO10, CERAMIC, SOIC-10 Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDIP8, CERAMIC, DIP-8
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
包装说明 QCCN, CERAMIC, DFP-10 CERAMIC, SOIC-10 DIP,
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 6 µA 6 µA 6 µA 6 µA
标称共模抑制比 80 dB 80 dB 80 dB 80 dB
最大输入失调电压 10000 µV 10000 µV 10000 µV 10000 µV
JESD-30 代码 S-CQCC-N20 R-GDFP-F10 R-GDSO-G10 R-GDIP-T8
负供电电压上限 -18 V -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V
功能数量 1 1 1 1
端子数量 20 10 10 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
封装代码 QCCN DFP SOP DIP
封装形状 SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER FLATPACK SMALL OUTLINE IN-LINE
筛选级别 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
座面最大高度 1.905 mm 2.032 mm 2.33 mm 5.08 mm
标称压摆率 300 V/us 300 V/us 300 V/us 300 V/us
供电电压上限 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V
表面贴装 YES YES YES NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY MILITARY
端子形式 NO LEAD FLAT GULL WING THROUGH-HOLE
端子节距 1.27 mm 1.27 mm 1.27 mm 2.54 mm
端子位置 QUAD DUAL DUAL DUAL
标称均一增益带宽 50000 kHz 50000 kHz 50000 kHz 50000 kHz
宽度 8.89 mm 6.3246 mm 6.12 mm 7.62 mm
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