The LM747 is a general purpose dual operational amplifier
The two amplifiers share a common bias network and power
supply leads Otherwise their operation is completely inde-
pendent
Additional features of the LM747 are no latch-up when in-
put common mode range is exceeded freedom from oscilla-
tions and package flexibility
The LM747C LM747E is identical to the LM747 LM747A
except that the LM747C LM747E has its specifications
guaranteed over the temperature range from 0 C to
a
70 C
instead of
b
55 C to
a
125 C
Features
Y
Y
Y
Y
Y
Y
No frequency compensation required
Short-circuit protection
Wide common-mode and differential voltage ranges
Low power consumption
No latch-up
Balanced offset null
Connection Diagrams
Metal Can Package
Dual-In-Line Package
TL H 11479 – 5
TL H 11479 – 4
Order Number LM747H
See NS Package Number H10C
V
a
A and V
a
B are internally connected
Order Number LM747CN or LM747EN
See NS Package Number N14A
C
1995 National Semiconductor Corporation
TL H 11479
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
g
22V
LM747 LM747A
g
18V
LM747C LM747E
Power Dissipation (Note 1)
800 mW
Differential Input Voltage
g
30V
Input Voltage (Note 2)
Output Short-Circuit Duration
Operating Temperature Range
LM747 LM747A
LM747C LM747E
Storage Temperature Range
Lead Temperature (Soldering 10 sec )
g
15V
Indefinite
b
55 C to
a
125 C
0 C to
a
70 C
b
65 C to
a
150 C
300 C
Electrical Characteristics
(Note 3)
Parameter
Input Offset Voltage
Conditions
T
A
e
25 C
R
S
s
10 kX
R
S
s
50X
R
S
s
50X
R
S
s
10 kX
Average Input Offset
Voltage Drift
Input Offset Voltage
Adjustment Range
Input Offset Current
T
A
e
25 C V
S
e
g
20V
T
A
e
25 C
g
10
LM747A LM747E
Min
Typ
Max
Min
LM747
Typ
10
Max
50
Min
LM747C
Typ
20
Max
60
Units
08
30
40
60
15
75
mV
mV
mV
C
g
15
g
15
mV
200
300
nA C
nA
30
30
70
20
85
200
500
20
Average Input Offset
Current Drift
Input Bias Current
Input Resistance
T
A
e
25 C
T
AMIN
s
T
A
s
T
AMAX
T
A
e
25 C V
S
e
g
20V
V
S
e
g
20V
Input Voltage Range
T
A
e
25 C
g
12
g
13
05
30
10
05
g
12
g
12
g
13
g
13
80
0 210
03
80
20
500
15
03
80
20
500
08
nA
mA
MX
60
V
Large Signal
Voltage Gain
T
A
e
25 C R
L
t
2 kX
V
S
e
g
20V V
O
e
g
15V
V
S
e
g
15V V
O
e
g
10V
R
L
t
2 kX
V
S
e
g
20V V
O
e
g
15V
V
S
e
g
15V V
O
e
g
10V
V
S
e
g
5V V
O
e
g
2V
50
50
32
25
10
g
16
g
15
V mV
200
20
200
V mV
V mV
15
V mV
V mV
Output Voltage Swing
V
S
e
g
20V
R
L
t
10 kX
R
L
t
2 kX
V
S
e
g
15V
R
L
t
10 kX
R
L
t
2 kX
V
g
12
g
10
g
14
g
13
g
12
g
10
g
14
g
13
V
mA
dB
Output Short
Circuit Current
Common-Mode
Rejection Ratio
T
A
e
25 C
R
S
s
10 kX V
CM
e
g
12V
R
S
s
50 kX V
CM
e
g
12V
10
10
25
35
40
70
25
90
70
25
90
80
95
2
Electrical Characteristics
(Note 3) (Continued)
Parameter
Supply Voltage
Rejection Ratio
Transient Response
Rise Time
Overshoot
Bandwidth (Note 4)
Slew Rate
Supply Current Amp
Power Consumption Amp
Conditions
V
S
e
g
20V to V
S
e
g
5V
R
S
s
50X
R
S
s
10 kX
T
A
e
25 C Unity Gain
0 25
60
T
A
e
25 C
T
A
e
25 C Unity Gain
T
A
e
25 C
T
A
e
25 C
V
S
e
g
20V
V
S
e
g
15V
V
S
e
g
20V
T
A
e
T
AMIN
T
A
e
T
AMAX
V
S
e
g
20V
T
A
e
T
AMIN
T
A
e
T
AMAX
V
S
e
g
15V
T
A
e
T
AMIN
T
A
e
T
AMAX
80
0 437
03
15
07
25
150
50
165
135
150
150
150
60
45
100
75
85
50
85
05
17
28
05
17
28
08
20
03
5
03
5
ms
%
MHz
V
ms
mA
LM747A LM747E
Min
86
Typ
96
77
96
77
96
Max
Min
LM747
Typ
Max
Min
LM747C
Typ
Max
Units
dB
mW
LM747A
mW
LM747E
mW
LM747
mW
Note 1
The maximum junction temperature of the LM747C LM747E is 100 C For operating at elevated temperatures devies in the TO-5 package must be
derated based on a thermal resistance of 150 C W junction to ambient or 45 C W junction to case The thermal resistance of the dual-in-line package is 100 C
W junction to ambient
Note 2
For supply voltages less than
g
15V the absolute maximum input voltage is equal to the supply voltage
Note 3
These specifications apply for
g
5V
s
V
S
s g
20V and
b
55 C
s
T
A
s
125 C for the LM747A and 0 C
s
T
A
s
70 C for the LM747E unless otherwise
specified The LM747 and LM747C are specified for V
S
e
g
15V and
b
55 C
s
T
A
s
125 C and 0 C
s
T
A
s
70 C respectively unless otherwise specified
Note 4
Calculated value from 0 35 Rise Time (ms)
Schematic Diagram
(Each Amplifier)
TL H 11479 – 1
Note
Numbers in parentheses are pin numbers for amplifier B DIP only
