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LMBT35200MT1G

Small Signal Bipolar Transistor,

器件类别:分立半导体    晶体管   

厂商名称:LRC

厂商官网:http://www.lrc.cn

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
LRC
包装说明
,
Reach Compliance Code
unknown
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LESHAN RADIO COMPANY, LTD.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
ORDERING INFORMATION
Device
LMBT35200MT1G
S-LMBT35200MT1G
LMBT35200MT3G
S-LMBT35200MT3G
Marking
G4
G4
G4
G4
Shipping
3000/Tape & Reel
10000/Tape & Reel
High Current Surface Mount PNP Silicon
Switching Transistor for Load Management in
Portable Applications
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT35200MT1G
S-LMBT35200MT1G
3
4
2
1
5
6
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
ITEM
SYMBOL
COLLECTOR-BASE VOLTAGE
VCBO
COLLECTOR-EMITTER VOLTAGE
VCEO
EMITTER-BASE VOLTAGE
VEBO
COLLECTOR CURRENT(DC)
IC
COLLECTOR CURRENT(Pulse)
ICP
COLLECTOR POWER DISSIPATION(Note.1)
PC
JUNCTION TEMPERATURE
Tj
STORAGE TEMPERATURE
Tstg
THERMAL RESISTANCE(Note1.)
1.FR-4@Minimum Pad
Rja
RATINGS
-80
-60
-5
-3
-6
625
150
-55 to 150
200
UNIT
V
V
V
A
A
mW
°C
°C
°C/W
TSOP-6
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25C)
ITEM
COLLECTOR-BASE
BREAKDOWN VOLTAGE
COLLECTOR-EMITTER
BREAKDOWN VOLTAGE
EMITTER-BASE
BREAKDOWN VOLTAGE
COLLECTOR CUTOFF CURRENT
EMITTER CUTOFF CURRENT
DC CURRENT GAIN 1
DC CURRENT GAIN 2
DC CURRENT GAIN 3
DC CURRENT GAIN 4
COLLECTOR SATURATION VOLTAGE 1
COLLECTOR SATURATION VOLTAGE 2
BASE SATURATION VOLTAGE
BASE-EMITTER ON VOLTAGE
TRANSITION FREQUENCY(*1)
COLLECTOR OUTPUT CAPACITANCE(*1)
TURN ON TIME(*1)
TURN OFF TIME(*1)
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE 1
hFE 2
hFE 3
hFE 4
VCE(sat) 1
VCE(sat) 2
VBE(sat)
VBE(on)
fT
Cob
ton
toff
MIN.
-80
-60
-5
-
-
70
100
80
40
-
-
-
-
100
-
-
-
TYP.
-
-
-
-
-
200
200
170
150
-0.15
-0.45
-0.9
-0.8
140
-
40
450
MAX.
-
-
-
-100
-100
-
300
-
-
-0.3
-0.6
-1.25
-1
-
30
-
-
UNIT
V
V
V
nA
nA
-
-
-
-
V
V
V
V
MHz
pF
ns
ns
CONDITIONS
IC= -100uA, IE= 0A
IC= -10mA, IB= 0A
IE= -100uA, IC= 0A
VCB= -60V, IE= 0A
VEB= -4V, IC= 0A
VCE= -2V, IC= -50mA
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
IC= -1A, IB= -100mA
IC= -3A, IB= -300mA
IC= -1A, IB= -100mA
VCE= -2V, IC= -1A
VCE= -5V, IE= 100mA
VCB= -10V, f= 1MHz, IE= 0A
VCC= -10V, IC= -500mA
-IB1= IB2= 50mA
Rev.O 1/2
LESHAN RADIO COMPANY, LTD.
LMBT35200MT1G;S-LMBT35200MT1G
TSOP-6
A
L
6
5
1
2
4
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
B
C
D
G
H
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0
_
10
_
2.50
3.00
COLLECTOR
COLLECTOR
BASE
EMITTER
COLLECTOR
COLLECTOR
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0
_
10
_
0.0985 0.1181
S
B
D
G
M
0.05 (0.002)
H
C
K
J
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
Rev.O 2/2
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