LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network con-
sisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or
LMUN5211T1G
Series
S-LMUN5211T1G
Series
3
1
2
SC-70 / SOT-323
PIN 1
BASE
(INPUT)
R
1
PIN 3
COLLECTOR
(OUTPUT)
R
2
PIN 2
EMITTER
(GROUND)
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb-Free package is available
•S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2
of this data sheet.
MARKINGDIAGRAM
8X
M
8x = Specific Device Code
x = (See Marking Table)
M= Date Code
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
618 (Note 1.)
403 (Note 2.)
280 (Note 1.)
332 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
R
θJA
R
θJL
T
J,
T
stg
Rev.O 1/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1G Series ;S-LMUN5211T1G Series
DEVICE MARKING RESISTOR VALUES AND ORDERING INFORMATION
Device
LMUN5211T1G
LMUN5211T3G
LMUN5212T1G
LMUN5212T3G
LMUN5213T1G
LMUN5213T3G
LMUN5214T1G
LMUN5214T3G
LMUN5215T1G(Note 3)
LMUN5215T3G
LMUN5216T1G(Note 3)
LMUN5216T3G
LMUN5230T1G(Note 3)
LMUN5230T3G
LMUN5231T1G(Note 3)
LMUN5231T3G
LMUN5232T1G(Note 3)
LMUN5232T3G
LMUN5233T1G(Note 3)
LMUN5233T3G
LMUN5234T1G(Note 3)
LMUN5234T3G
LMUN5235T1G(Note 3)
LMUN5235T3G
LMUN5236T1G(Note 3)
LMUN5236T3G
LMUN5237T1G(Note 3)
LMUN5237T3G
Package
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
Marking
8A
8A
8B
8B
8C
8C
8D
8D
8E
8E
8F
8F
8G
8G
8H
8H
8J
8J
8K
8K
8L
8L
8M
8M
8N
8N
8P
8P
R1(K)
10
10
22
22
47
47
10
10
10
10
4.7
4.7
1
1
2.2
2.2
4.7
4.7
4.7
4.7
22
22
2.2
2.2
100
100
47
47
1
1
2.2
2.2
4.7
4.7
47
47
47
47
47
47
100
100
22
22
R2(K)
10
10
22
22
47
47
47
47
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3. New devices. Updated curves to follow in subsequent data sheets.
Rev.O 2/10
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LMUN5211T1G
LMUN5212T1G
LMUN5213T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5236T1G
LMUN5237T1G
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 4.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 4.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LMUN5211T1G
LMUN5212T1G
LMUN5213T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5236T1G
LMUN5237T1G
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LMUN5230T1/LMUN5231T1
(I
C
= 10 mA, I
B
= 1 mA) LMUN5215T1/LMUN5216T1/
LMUN5232T1/LMUN5233T1/LMUN5234T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
LMUN5211T1G
LMUN5212T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5213T1G
LMUN5236T1G
LMUN5237T1G
V
CE(sat)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Rev.O 3/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1G Series ;S-LMUN5211T1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5.) (Continued)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ)
LMUN5230T1G
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
LMUN5215T1G
LMUN5216T1G
LMUN5233T1G
Input Resistor
LMUN5211T1G
LMUN5212T1G
LMUN5213T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5236T1G
LMUN5237T1G
LMUN5211T1G/LMUN5212T1G/LMUN5213T1G/
LMUN5236T1G
LMUN5214T1G
LMUN5215T1G/LMUN5216T1G
LMUN5230T1G/LMUN5231T1G/LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5237T1G
V
OH
4.9
–
–
Vdc
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
Resistor Rati
R
1
/R
2
5. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
–50
R
θJA
= 403°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Rev.O 4/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1G Series ;S-LMUN5211T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211T1G
VCE(sat) , MTXIMUM COLLECTOR VOLTTGE (VOLTS)
1
I
C
/I
B
= 10
T
T
= -25°C
25°C
0.1
75°C
1000
h FE , DC CURRENT GTIN (NORMTLIZED)
V
CE
= 10 V
T
T
= 75°C
25°C
-25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mT)
50
10
1
10
I
C
, COLLECTOR CURRENT (mT)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
T
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mT)
10
1
0.1
25°C
T
T
= -25°C
Cob , CTPTCITTNCE (pF)
3
2
1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTTGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BITS VOLTTGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTTGE (VOLTS)
T
T
= -25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mT)
40
50
Figure 6. Input Voltage versus Output Current
Rev.O 5/10
