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LPC660AMJ/883

Operational Amplifier, 4 Func, 3000uV Offset-Max, CMOS, CDIP14, CERAMIC, DIP-14

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
零件包装代码
DIP
包装说明
DIP, DIP14,.3
针数
14
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.00002 µA
25C 时的最大偏置电流 (IIB)
0.00002 µA
标称共模抑制比
83 dB
频率补偿
YES
最大输入失调电压
3000 µV
JESD-30 代码
R-CDIP-T14
JESD-609代码
e0
长度
19.43 mm
低-偏置
YES
低-失调
NO
微功率
YES
负供电电压上限
标称负供电电压 (Vsup)
功能数量
4
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
5/15 V
认证状态
Not Qualified
筛选级别
MIL-STD-883
座面最大高度
5.08 mm
最小摆率
0.04 V/us
标称压摆率
0.11 V/us
最大压摆率
0.25 mA
供电电压上限
16 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
350 kHz
最小电压增益
35000
宽度
7.62 mm
文档预览
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LPC660 Low Power CMOS Quad Operational Amplifier
August 2000
LPC660
Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltages from +5V to +15V and features rail-to-rail
output swing in addition to an input common-mode range
that includes ground. Performance limitations that have
plagued CMOS amplifiers in the past are not a problem with
this design. Input V
OS
, drift, and broadband noise as well as
voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better
than widely accepted bipolar equivalents, while the power
supply requirement is typically less than 1 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS operational
amplifier and LPC661 datasheet for a single CMOS
operational amplifier with these same features.
n
n
n
n
n
Long-term integrator
High-impedance preamplifier
Active filter
Sample-and-Hold circuit
Peak detector
Features
n
n
n
n
n
n
n
n
n
n
n
n
Rail-to-rail output swing
Micropower operation:
Specified for 100 kΩ and 5 kΩ loads
High voltage gain:
Low input offset voltage:
Low offset voltage drift:
Ultra low input bias current:
Input common-mode includes V
Operation range from +5V to +15V
Low distortion:
Slew rate:
Full military temp. range available
(1 mW)
120 dB
3 mV
1.3 µV/˚C
2 fA
Applications
n
High-impedance buffer
n
Precision current-to-voltage converter
0.01% at 1 kHz
0.11 V/µs
Application Circuit
Sine-Wave Oscillator
DS010547-10
Oscillator frequency is determined by R1, R2, C1, and C2:
f
OSC
= 1/2πRC
where R = R1 = R2 and C = C1 = C2.
© 2001 National Semiconductor Corporation
DS010547
www.national.com
LPC660
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
− V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature (Note 2)
ESD Rating
(C = 100 pF, R = 1.5 kΩ)
Power Dissipation
Current at Input Pin
Current at Output Pin
Voltage at Input/Output Pin
Current at Power Supply Pin
(V
+
) + 0.3V, (V
) − 0.3V
35 mA
Operating Ratings
(Note 3)
Temperature Range
LPC660AM
LPC660AI
LPC660I
Supply Range
Power Dissipation
Thermal Resistance (θ
JA
), (Note 10)
14-Pin Ceramic DIP
14-Pin Molded DIP
14-Pin SO
14-Pin Side Brazed Ceramic DIP
−55˚C
T
J
+125˚C
−40˚C
T
J
+85˚C
−40˚C
T
J
+85˚C
4.75V to 15.5V
(Note 9)
90˚C/W
85˚C/W
115˚C/W
90˚C/W
±
Supply Voltage
16V
(Note 11)
(Note 1)
260˚C
−65˚C to +150˚C
150˚C
1000V
(Note 2)
±
5 mA
±
18 mA
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V, and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common Mode
Voltage Range
V
+
= 5V & 15V
For CMRR
>
50 dB
V − 1.9
Large Signal
Voltage Gain
R
L
= 100 kΩ (Note 5)
Sourcing
Sinking
R
L
= 5 kΩ (Note 5)
Sourcing
Sinking
250
500
1000
1000
+
+
LPC660AI
Limit
(Note 4)
3
3.3
LPC660I
Limit
(Note 4)
6
6.3
Units
1
1.3
0.002
0.001
3
3.5
mV
max
µV/˚C
20
100
20
100
2
70
68
70
68
84
83
−0.1
0
V − 2.3
V
+
− 2.5
400
300
180
120
200
160
100
60
+
+
pA
4
4
2
63
61
63
61
74
73
−0.1
0
V − 2.3
V
+
− 2.5
300
200
90
70
100
80
50
40
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
>
1
0V
V
CM
12.0V
V = 15V
5V
V
+
15V
0V
V
−10V
83
94
−0.4
+
83
70
68
70
68
84
82
−0.1
0
V − 2.3
V
+
− 2.6
400
250
180
70
200
150
100
35
www.national.com
2
LPC660
DC Electrical Characteristics
Parameter
Conditions
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V, and R
L
>
1M unless otherwise specified.
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
Output Swing
V = 5V
R
L
= 100 kΩ to V /2
0.004
V
+
= 5V
R
L
= 5 kΩ to V /2
0.040
V = 15V
R
L
= 100 kΩ to V
+
/2
0.007
V = 15V
R
L
= 5 kΩ to V
+
/2
0.110
Output Current
V = 5V
Sinking, V
O
= 5V
Output Current
V = 15V
Sinking, V
O
= 13V
(Note 11)
Supply Current
All Four Amplifiers
V
O
= 1.5V
160
39
+
+
+
+
+
+
+
LPC660AI
Limit
(Note 4)
4.970
4.950
0.030
0.050
4.850
4.750
0.150
0.250
14.920
14.880
0.030
0.050
14.680
14.600
0.220
0.300
16
14
16
14
28
25
28
24
200
230
LPC660I
Limit
(Note 4)
4.940
4.910
0.060
0.090
4.750
4.650
0.250
0.350
14.880
14.820
0.060
0.090
14.580
14.480
0.320
0.400
13
11
13
11
23
20
23
19
240
270
Units
4.987
4.970
4.950
0.030
0.050
4.850
4.750
0.150
0.250
14.920
14.880
0.030
0.050
14.680
14.600
0.220
0.300
16
12
16
12
19
19
19
19
200
250
V
min
V
max
V
min
V
max
V
min
V
max
V
min
V
max
mA
min
mA
min
mA
min
mA
min
µA
max
4.940
14.970
14.840
Sourcing, V
O
= 0V
22
21
40
Sourcing, V
O
= 0V
3
www.national.com
LPC660
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5, and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
(Note 7)
F = 1 kHz
F = 1 kHz
F = 1 kHz, A
V
= −10
R
L
= 100 kΩ, V
O
= 8 V
PP
Note 1:
Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(max)
–T
A
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
V
O
11.5V. For Sinking tests, 2.5V
V
O
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 100 kΩ connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
A military RETS electrical test specification is available on request. At the time of printing, the LPC660AMJ/883 RETS specification complied fully with the
boldface
limits in this column. The LPC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9:
For operating at elevated temperatures, the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
–T
A
)/θ
JA
.
Note 10:
All numbers apply for packages soldered directly into a PC board.
Note 11:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
LPC660AI
Limit
(Note 4)
0.07
0.05
LPC660I
Limit
(Note 4)
0.05
0.03
Units
(Note 6)
0.11
0.35
50
17
130
42
0.0002
0.01
0.07
0.04
V/µs
min
MHz
Deg
dB
dB
%
Typical Performance Characteristics
Supply Current
vs Supply Voltage
V
S
=
±
7.5V, T
A
= 25˚C unless otherwise specified
Input Bias Current
vs Temperature
DS010547-27
DS010547-28
www.national.com
4
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