LS124
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT124
The LS124 is a monolithic pair of Super-Beta NPN
transistors mounted in a single TO-78 package. The
monolithic dual chip design reduces parasitics and
gives better performance while ensuring extremely tight
matching. The LS124 is a direct replacement for
discontinued Intersil IT124.
The hermetically sealed TO-78 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
LS124 Features:
Very high gain
Tight matching
Low Output Capacitance
FEATURES
Direct Replacement for INTERSIL IT124
HIGH GAIN
LOW OUTPUT CAPACITANCE
V
BE
tracking
ABSOLUTE MAXIMUM RATINGS
1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
MIN
‐‐
‐‐
‐‐
TYP
2
5
‐‐
MAX
5
15
0.6
UNITS
mV
µV/°C
nA
h
FE
≥ 1500 @ 1 AND 10µA
≤ 2.0pF
≤ 5.0µV°C
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
CONDITIONS
I
C
= 10µA, V
CE
= 1V
I
C
= 10µA, V
CE
= 1V
T
A
= ‐55°C to +125°C
I
C
= 10µA, V
CE
= 1V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V
BE1
– V
BE2
|
Base Emitter Voltage Differential
∆|(V
BE1
– V
BE2
)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
|I
B1
– I
B2
|
Base Current Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV
CBO
Collector to Base Voltage
2
BV
CEO
Collector to Emitter Voltage
2
BV
EBO
Emitter‐Base Breakdown Voltage
6.2
BV
CCO
Collector to Collector Voltage
100
h
FE
DC Current Gain
1500
1500
V
CE
(SAT)
Collector Saturation Voltage
‐‐
I
EBO
Emitter Cutoff Current
‐‐
I
CBO
Collector Cutoff Current
‐‐
C
OBO
Output Capacitance
‐‐
C
C1C2
Collector to Collector Capacitance
‐‐
I
C1C2
Collector to Collector Leakage Current
‐‐
f
T
Current Gain Bandwidth Product
100
NF
Narrow Band Noise Figure
‐‐
Click To Buy
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.5
100
100
2
2
10
‐‐
3
UNITS
V
V
V
V
V
pA
pA
pF
pF
nA
MHz
dB
TO-78 (Bottom View)
CONDITIONS
I
C
= 10µA, I
E
= 0
I
C
= 10µA, I
B
= 0
I
E
= 10µA, I
C
= 0
2
I
C
= 10µA, I
E
= 0
I
C
= 1µA, V
CE
= 1V
I
C
= 10µA, V
CE
= 1V
I
C
= 1mA, I
B
= 0.1mA
I
C
= 0, V
EB
= 3V
I
E
= 0, V
CB
= 1V
I
E
= 0, V
CB
= 1V
V
CC
= 0V
V
CC
= ±50V
I
C
= 100µA, V
CE
= 1V
I
C
= 10µA, V
CE
= 3V, BW=200Hz, R
G
= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
LS124 in TO-78
LS124 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
