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LY62W5128UL

512K X 8 BIT LOW POWER CMOS SRAM

厂商名称:Lyontek

厂商官网:http://www.lyontek.com.tw/index.html

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®
LY62W5128
Rev. 1.a
512K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.a
Description
Initial Issue
Issue Date
Jul.15.2009
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62W5128
Rev. 1.a
512K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62W5128 is a 4,194,304-bit low power
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62W5128 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY62W5128 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 4μA (TYP.)
Single 2.7V ~ 5.5V power supply
All outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 32-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY62W5128
LY62W5128(E)
LY62W5128(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
2.7 ~ 5.5V
2.7 ~ 5.5V
Speed
55ns
55ns
55ns
Power Dissipation
Standby(I
SB1
TYP.) Operating(Icc,TYP.)
4µA
30mA
4µA
30mA
4µA
30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A18
DQ0 – DQ7
DECODER
512Kx8
MEMORY ARRAY
CE#
WE#
OE#
V
CC
V
SS
NC
A0-A18
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62W5128
Rev. 1.a
512K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-II
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
LY62W5128
2
®
LY62W5128
Rev. 1.a
512K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*1
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
V
IN
V
SS
Output Leakage
V
CC
V
OUT
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
I
CC
CE# = 0.2V, I
I/O
= 0mA
other pins at 0.2V or V
CC
- 0.2V
Average Operating
Power supply Current
Cycle time = 1µs
I
CC1
CE# = 0.2V, I
I/O
= 0mA
other pins at 0.2V or V
CC
- 0.2V
Standby Power
CE#
V
CC
- 0.2V or CE2
0.2V
I
SB1
Supply Current
Others at 0.2V or V
CC
- 0.2V
Notes:
MIN.
TYP.
2.7
3.0
0.7*Vcc
-
- 0.2
-
-1
-
-1
2.4
-
-
-
-
-
30
*3
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
60
UNIT
V
V
V
µA
µA
V
V
mA
-
-
4
4
10
50
*4
mA
µA
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
2. Over/Undershoot specifications are characterized, not 100% tested.
3. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
4. 25µA for special request
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62W5128
Rev. 1.a
512K X 8 BIT LOW POWER CMOS SRAM
CAPACITANCE
(T
A
= 25
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -2mA/4mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY62W5128-55
MIN.
MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
20
-
20
10
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY62W5128-55
MIN.
MAX.
55
-
50
-
50
-
0
-
45
-
0
-
25
-
0
-
5
-
-
20
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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参数对比
与LY62W5128UL相近的元器件有:LY62W5128E、LY62W5128UV、LY62W5128、LY62W5128I、LY62W5128WL、LY62W5128WV。描述及对比如下:
型号 LY62W5128UL LY62W5128E LY62W5128UV LY62W5128 LY62W5128I LY62W5128WL LY62W5128WV
描述 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM
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