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M8G48

AC POWER CONTROL APPLICATIONS

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

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SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8G48,USM8G48,SM8J48,USM8J48
SM8G48A,USM8G48A,SM8J48A,USM8J48A
AC POWER CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage
l
R.M.S On−State Current
l
Gate Trigger Current
: I
GT
= 30mA Max.
: I
GT
= 20mA Max. (“A”Type)
Unit: mm
SM8G48, SM8J48, SM8G48A, SM8J48A
USM8G48, USM8J48, USM8G48A, USM8J48A
: V
DRM
= 400, 600V
: I
T (RMS)
= 8A
JEDEC
JEITA
TOSHIBA
―
―
13-10J1A
JEDEC
JEITA
TOSHIBA
―
―
13-10J2A
Weight: 1.7g
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off-State Voltage
(U)SM8G48
(U)SM8G48A
(U)SM8J48
(U)SM8J48A
SYMBOL
RATING
400
V
DRM
600
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
2
UNIT
V
8
80 (50Hz)
88 (60Hz)
32
50
5
0.5
10
2
−40~125
−40~125
A
A
A s
A / µs
W
W
V
A
°C
°C
2
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
Note 1: V
DRM
= 0.5×Rated
I
TM
≤
12A
t
gw
≥
10
µ
s
t
gr
≤
250ns
i
gp
= I
GT
×2.0
1
2001-07-10
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
IV
I
(U)SM8G48
(U)SM8J48
Gate Trigger
Current
(U)SM8G48A
(U)SM8J48A
II
III
IV
I
II
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of Off−State
Voltage
Critical Rate of
Rise of Off−State
Voltage at
Commutation
(U)SM8G48
(U)SM8J48
(U)SM8G48A
(U)SM8J48A
(U)SM8G48
(U)SM8J48
(U)SM8G48A
(U)SM8J48A
V
TM
V
GD
I
H
R
th (j−c)
I
TM
= 12A
V
D
= Rated, Tc = 125°C
V
D
= 12V, I
TM
= 1A
Junction to Case, AC
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
I
GT
V
D
= 12V
R
L
= 20Ω
V
GT
V
D
= 12V
R
L
= 20Ω
SYMBOL
I
DRM
TEST CONDITION
V
DRM
= Rated
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
MIN
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.2
―
―
―
―
10
4
TYP.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
300
200
―
―
MAX
20
1.5
1.5
1.5
―
30
30
30
―
20
20
20
―
1.5
―
50
2.8
―
V / µs
―
―
V / µs
―
V
V
mA
°C / W
mA
V
UNIT
µA
dv / dt
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
−4.5A
/ ms
MARKING
NUMBER
*1
*2
SYMBOL
SM8G48, SM8G48A, USM8G48, USM8G48A
TYPE
SM8J48, SM8J48A, USM8J48, USM8J48A
SM8G48A, SM8J48A, USM8G48A, USM8J48A
Example
*3
8A : January 1998
8B : Febrary 1998
8L : December 1998
MARK
M8G48
M8J48
A
2
2001-07-10
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A
3
2001-07-10
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A
4
2001-07-10
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
5
2001-07-10
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参数对比
与M8G48相近的元器件有：SM8G48、SM8J48、USM8J48、USM8G48、USM8J48A、USM8G48A、SM8J48A、SM8G48A、M8J48。描述及对比如下：
型号 M8G48 SM8G48 SM8J48 USM8J48 USM8G48 USM8J48A USM8G48A SM8J48A SM8G48A M8J48
描述 AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS
是否Rohs认证 - 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 -
零件包装代码 - TO-220FL TO-220FL TO-220SM TO-220SM TO-220SM TO-220SM TO-220FL TO-220FL -
包装说明 - IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 -
针数 - 3 3 3 3 3 3 3 3 -
Reach Compliance Code - unknow unknow unknow unknow unknow unknow unknow unknow -
配置 - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
换向电压的临界上升率-最小值 - 10 V/us 10 V/us 10 V/us 10 V/us 4 V/us 4 V/us 4 V/us 4 V/us -
最大直流栅极触发电流 - 30 mA 30 mA 30 mA 30 mA 20 mA 20 mA 20 mA 20 mA -
最大直流栅极触发电压 - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V -
最大维持电流 - 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA -
JESD-30 代码 - R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 -
元件数量 - 1 1 1 1 1 1 1 1 -
端子数量 - 3 3 2 2 2 2 3 3 -
最高工作温度 - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C -
最低工作温度 - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 - IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE -
峰值回流温度（摄氏度） - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
最大均方根通态电流 - 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A -
重复峰值关态漏电流最大值 - 20 µA 20 µA 20 µA 20 µA 20 µA 20 µA 20 µA 20 µA -
断态重复峰值电压 - 400 V 600 V 600 V 400 V 600 V 400 V 600 V 400 V -
表面贴装 - NO NO YES YES YES YES NO NO -
端子形式 - THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE -
端子位置 - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
触发设备类型 - TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC -
是否无铅 - - - 含铅 含铅 含铅 含铅 含铅 含铅 -
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