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MAAPGM0060-DIE

MAAPGM0060-DIE

器件类别:无线/射频/通信    射频和微波   

厂商名称:TE Connectivity(泰科)

厂商官网:http://www.te.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
TE Connectivity(泰科)
包装说明
0.163 X 0.163 INCH, 0.003 INCH HEIGHT, DIE
Reach Compliance Code
unknown
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MAAPGM0060-DIE
Part Status: Preliminary
Rev: A
Amplifier, Power, 5W
4.8—6.7 GHz
Features
5 Watt Saturated Output Power Level
Variable Drain Voltage (6-10V) Operation
MSAG Process
M/A-COM Products
RoHS Compliant
Description
The
MAAPGM0060-DIE
is a 2-stage, 5 W power amplifier with on-chip
bias
net w or ks.
This
pr oduct
is
f ully
mat c hed
to
50 ohms on both the input and output. It can be used as a power ampli-
fier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
Point-to-Point Radio
SatCom
Broadband Wireless Access
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, Idq
1.8A
2
, P
in
= 20 dBm, Rg = 100
Ω
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
1.
2.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information
contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
Typical
4.8-6.7
37
29
37
18
3.0:1
1.5:1
< 4
< 2.5
Units
GHz
dBm
%
dBm
dB
mA
A
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.5V to achieve specified Idq.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED:
In full production, samples readily available, standard lead times apply.
MAAPGM0060-DIE
Part Status: Preliminary
Rev: A
Amplifier, Power, 5W
4.8—6.7 GHz
Maximum Ratings
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
25.0
+12.0
-3.0
3
27
180
-55 to +150
M/A-COM Products
RoHS Compliant
Units
dBm
V
V
A
W
°C
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions
4
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Symbol
V
DD
V
GG
P
IN
Min
6.0
-2.6
Typ
8.0
-1.8
20.0
Max
10.0
-1.5
23.0
150
3.7
Note 5
Unit
V
V
dBm
°C
°C/W
°C
Junction Temperature
T
J
2. Voltage Levels valid from –60ºC to +180º Base Temperature.
Thermal Resistance
Θ
JC
Package Base Temperature
4.
5.
T
B
Operation outside of these ranges may reduce product reliability.
Maximum MMIC Base Temperature = 150°C —
Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2.0 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage of 8 V.
3. Set RF input.
4. Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information
contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED:
In full production, samples readily available, standard lead times apply.
MAAPGM0060-DIE
Part Status: Preliminary
Rev: A
Amplifier, Power, 5W
4.8—6.7 GHz
40
38
36
34
POUT
PAE
40
40
M/A-COM Products
RoHS Compliant
50
50
POUT (dBm)
30
28
26
24
22
20
4.5
5.0
5.5
6.0
6.5
7.0
0
10
20
PAE(%)
32
30
P1dB (dBm)
30
20
VDD = 6
VDD = 8
10
VDD = 10
0
4.5
5.0
5.5
6.0
6.5
7.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at V
DD
= 8V and P
i n
= 20 dBm
Frequency (GHz)
Figure 2. 1dB Compression Point vs. Drain Voltage
50
3.0
40
2.5
2.0
POUT (dBm)
30
IDS (A)
1.5
5.0 GHz
5.5 GHz
6.5 GHz
20
5.0 GHz
1.0
5.5 GHz
10
6.5 GHz
0.5
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
0.0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
PIN (dBm)
Figure 3. Output Power vs. Input Power
at V
DD
= 8V
50
POUT
PAE
40
40
25
50
30
Input Power (dBm)
Figure 4. Drain Current vs. Input Power
at V
DD
= 8V
6
Gain
Input VSWR
Output VSWR
5
POUT (dBm)
PAE(%)
Gain (dB)
30
30
20
4
20
20
15
3
10
10
10
2
0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
0
10.0
5
4.5
5.0
5.5
6.0
6.5
7.0
Frequency (GHz)
1
Drain Voltage (volts)
Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at f
o
= 6 GHz
Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information
contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED:
In full production, samples readily available, standard lead times apply.
VSWR
MAAPGM0060-DIE
Part Status: Preliminary
Rev: A
Amplifier, Power, 5W
4.8—6.7 GHz
Mechanical Information
Chip Size: 4.170 x 4.170 x 0.075 mm
M/A-COM Products
RoHS Compliant
(163 x 163 x 3 mils)
Figure 7. Die Layout
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information
contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
Size (μm)
100 x 150
200 x 150
150 x 150
Size (mils)
4x6
8x6
6x6
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED:
In full production, samples readily available, standard lead times apply.
MAAPGM0060-DIE
Part Status: Preliminary
Rev: A
Amplifier, Power, 5W
4.8—6.7 GHz
Assembly and Bonding Diagram
M/A-COM Products
RoHS Compliant
100 pF
100 pF
100 pF
RF
IN
RF
OUT
V
GG
100
Ω
0.1
μF
100 pF
100 pF
100 pF
0.1
μF
V
DD
Figure 8. Recommended bonding diagram
for pedestal mount.
Support circuitry typical of MMIC characterization.
RF ports are internally DC blocked.
Assembly Instructions:
Die attach:
Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding:
Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to V
GG
before applying positive bias to V
DD
to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information
contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED:
In full production, samples readily available, standard lead times apply.
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