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MBRB20H35CT-HE3/81

DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
D2PAK
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-3
针数
3
Reach Compliance Code
unknown
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New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
2
MBR20HxxCT
PIN 1
PIN 3
PIN 2
CASE
3
1
MBRF20HxxCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
MBRB20HxxCT
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
10 A x 2
35 V to 60 V
150 A
0.55 V, 0.61 V
100 µA
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified
current (Fig. 1)
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
1.0
20
MBR20H35CT
35
35
35
MBR20H45CT
45
45
45
20
10
80
150
0.5
10
MBR20H50CT
50
50
50
MBR20H60CT
60
60
60
UNIT
V
V
V
A
mJ
A
A
mJ
Non-repetitive avalanche energy per diode at
25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode at
t
p
= 2.0 µs, 1 kHz
Peak non-repetitive reverse energy
(8/20 µs waveform)
Document Number: 88787
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
SYMBOL
V
C
dV/dt
T
J
, T
STG
V
AC
MBR20H35CT
MBR20H45CT
25
10 000
- 65 to + 175
1500
MBR20H50CT
MBR20H60CT
UNIT
kV
V/µs
°C
V
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR20H35CT
MBR20H45CT
TYP.
Maximum instantaneous forward voltage
per diode
(1)
Maximum reverse current
at rated V
R
per diode
(2)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
-
0.49
-
0.62
-
4.0
MAX.
0.63
0.55
0.75
0.68
100
12
MBR20H50CT
MBR20H60CT
TYP.
-
0.57
-
0.68
-
2.0
MAX.
0.71
0.61
0.85
0.71
100
12
UNIT
V
F
V
I
R
µA
mA
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case per diode
SYMBOL
R
θJC
MBR
2.0
MBRF
4.0
MBRB
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
Note:
(1) Automotive grade AEC Q101 qualified
PREFERRED P/N
MBR20H45CT-E3/45
MBRF20H45CT-E3/45
MBRB20H45CT-E3/45
MBRB20H45CT-E3/81
MBR20H45CTHE3/45
(1)
MBRF20H45CTHE3/45
(1)
MBRB20H45CTHE3/45
(1)
MBRB20H45CTHE3/81
(1)
UNIT WEIGHT (g)
1.85
1.99
1.35
1.35
1.85
1.99
1.35
1.35
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88787
Revision: 19-May-08
New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
100
Instantaneous Reverse Leakage
Current (mA)
MBR, MBRB
Average Forward Current (A)
20
10
T
J
= 150 °C
1
T
J
= 125 °C
0.1
MBR20H35CT - MBR20H45CT
MBR20H50CT - MBR20H60CT
15
MBRF
10
0.01
5
0.001
T
J
= 25 °C
0
0
25
50
75
100
125
150
175
0.0001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Derating Curve (Total)
Figure 4. Typical Reverse Characteristics Per Diode
175
1000
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
MBR20H35CT - MBR20H45CT
MBR20H50CT - MBR20H60CT
100
Peak Forward Surge Current (A)
125
100
75
50
25
1
10
100
Junction Capacitance (pF)
150
10
0.1
1
10
100
Number
of Cycles at 60 Hz
Reverse
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
10
10
T
J
= 150 °C
1
T
J
= 25 °C
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
0.1
MBR20H35CT - MBR20H45CT
MBR20H50CT - MBR20H60CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
0.01
0.1
1
10
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88787
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88787
Revision: 19-May-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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