ANALOG Switch
MC74VHC1GT66
The MC74VHC1GT66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It
achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls
analog and digital voltages that may vary across the full power–supply range (from VCC to GND).
The MC74VHC1GT66 is compatible in function to a single gate of the very High Speed CMOS MC74VHCT4066. The device has
been designed so that the ON resistances (RON) are much lower and more linear over input voltage.
The ON/OFF Control input is compatible with TTL–type input thresholds allowing the device to be used as a logic–level translator from
3.0 V CMOS logic to 5.0 V CMOS logic or from 1.8 V CMOS logic to 3.0 V CMOS logic while operating at the high–voltage power supply.
The input protection circuitry on this device allows overvoltage tolerance on the input, which provides protection when voltages of up to 7
V are applied, regardless of the supply voltage. This allows the MC74VHC1GT66 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t
PD
= 20 ns (Typ) at V
CC
= 5 V
• Low Power Dissipation: I
CC
= 2
µA
(Max) at T
A
= 25°C
• Diode Protection Provided on Inputs and Outputs
• Improved Linearity and Lower ON Resistance over Input Voltage
• On/Off Control Input Has OVT
MARKING DIAGRAMS
5
4
1
2
3
VE
d
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
5
4
Figure 1. Pinout
(Top View)
1
2
3
VE
d
Figure 2. Logic Symbol
Pin 1
d = Date Code
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1
2
3
4
5
IN/OUT X
A
OUT/IN Y
A
GND
ON/OFF CONTROL
V
CC
FUNCTION TABLE
On / Off Control Input State Analog Switch
L
Off
H
On
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 6 of this data sheet.
VHT66–1/6
MC74VHC1GT66
MAXIMUM RATINGS
Value
Unit
DC Supply Voltage
– 0.5 to + 7.0
V
DC Input Voltage
– 0.5 to +7.0
V
Analog Output Voltage
–0.5 to +7.0
V
Input Diode Current
–20
mA
DC Supply Current, V
CC
and GND
+25
mA
Power dissipation in still air
SC–88A (Note 2.)
200
mW
TSOP5 (Note 2.)
450
T
L
Lead Temperature, 1 mm from Case for 10 s
260
°C
T
stg
Storage temperature
–65 to +150
°C
V
ESD
ESD Withstand Voltage
Human Body Model (Note 3)
>2000
V
Machine Model (Note 4)
> 200
Charged Device Model (Note 5)
N/A
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 6)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
eyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Derating – SC–88A Package: –3 mW/°C from 65°C to 125°C
– TSOP5 Package: –6 mW/°C from 65°C to 125°C
3. Tested to EIA/JESD22–A114–A
4. Tested to EIA/JESD22–A115–A
5. Tested to JESD22–C101–A
6. Tested to EIA/JESD78
Symbol
V
CC
V
IN
V
IS
I
IK
I
CC
P
D
Parameter
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage
V
IN
V
IS
T
A
t
r
,t
f
DC Input Voltage
Analog Input Voltage
Operating Temperature Range
Input Rise and Fall Time
Min
2.0
GND
GND
– 55
0
0
Max
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
The
θ
JA
of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the
table and figure below.
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VHT66–2/6
MC74VHC1GT66
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
Parameter
V
IH
Minimum High–Level
Input Voltage
On/Off Control Input
V
IL
Maximum Low–Level
Input Voltage
R
ON
=Per Spec
3.0
4.5
5.5
V
IN
=x V
cc
or GND 0 to 5.5
0.53
0.8
0.8
±
0.1
0.53
0.8
0.8
±
1.0
0.53
0.8
0.8
±
1.0
µA
Test Conditions
R
ON
=Per Spec
(V)
3.0
4.5
5.5
T
A
= 25°C
Min
1.2
2.0
2.0
Max
T
A
<
85°C
T
A
<125°C
Min
1.2
2.0
2.0
Max
Min
1.2
2.0
2.0
V
Max
Unit
V
I
IN
Maximum Input
Leakage Current
On/Off Control Input
I
CC
I
CCT
R
ON
Maximum Quiescent
Supply Current
Quiescent Supply
Current
Maximum ”ON”
Resistance
Maximum Off–Channel
Leakage Current
V
IN
= V
CC
or GND
On/Off Control
at 3.4 V
V
IN
= V
IH
V
IS
= V
CC
or GND
|I
IS
|
<
10 mA (Figure 4.)
V
IN
= V
IL
V
IS
= V
CC
or GND
Switch Off (Figure 5.)
5.5
5.5
3.0
4.5
5.5
5.5
2.0
1.35
60
45
40
0.1
20
1.50
70
50
45
0.5
40
1.65
100
60
55
1.0
µA
mA
Ω
I
OFF
mA
AC ELECTRICAL CHARACTERISTICS
C
load
= 50 pF, Input t
r
/ t
f
= 3.0 ns
Symbol
Parameter
Test Conditions
Y
A
= Open
(Figure 14.)
V
CC
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
0.0
5.0
T
A
= 25°C
Min Typ Max
1
0
0
0
32
28
24
20
32
28
24
20
3
4
4
5
2
1
1
40
35
30
25
40
35
30
25
10
10
10
T
A
<
85°C
–55°C<T
A
<125°C
Min
Max Min Max Unit
6
3
1
1
45
40
35
30
45
40
35
30
10
10
10
7
4
2
1
50
45
40
35
50
45
40
35
10
10
10
ns
ns
ns
t
PLH
, Maximum Propogation
t
PHL
Delay,
Input X to Y
t
PLZ
,
t
PHZ
Maximum Propogation
Delay,
ON/OFF Control to
Analog Output
t
PZL
, Maximum Propogation
Delay,
t
PZH
ON/OFF Control to
C
IN
Analog Output
Maximum Input
Capacitance
R
L
= 1000
Ω
(Figure 15.)
R
L
= 1000
Ω
(Figure 15.)
ON/OFF Control Input
Contol Input = GND
Analog I/O
Feedthrough
pF
C
PD
Power Dissipation Capacitance (Note 6)
Typical @ 25°C, V
CC
= 5.0 V
18
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
•
V
CC
•
f
in
+ I
CC
.
C
PD
is used to determine the no–
load dynamic power consumption; P
D
= C
PD
•
V
CC 2
•
f
in
+ I
CC
•
V
CC
.
VHT66–3/6
MC74VHC1GT66
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
Symbol
BW
Parameter
Test Conditions
V
Limit
CC
25°C
150
175
180
–80
–80
–80
45
60
130
Unit
MHz
Maximum On–Channel Bandwidth f
in
= 1 MHz Sine Wave
or Minimum Frequency Response Adjust f
in
voltage to obtain 0 dBm at V
OS
(Figure 10.)
Increase f
in
= frequency until dB meter reads –3 dB
R
L
= 50
Ω,
C
L
= 10 pF
Off–Channel Feedthrough
f
in
= Sine Wave
ISO
off
Isolation
Adjust f
in
voltage to obtain 0 dBm at V
IS
(Figure 11.)
f
in
= 10 kHz, R
L
= 600
Ω,
C
L
= 50 pF
NOISE
feed
Feedthrough Noise Control to
V
in
<1 MHz Square Wave (t
r
= t
f
= 2ns)
Switch
Adjust R
L
at setup so that I
s
= 0 A
(Figure 12.)
R
L
= 600
Ω,
C
L
= 50 pF
THD
Total Harmonic Distortion
(Figure 13.)
f
in
= 1 kHz, R
L
= 10 k
Ω,
C
L
= 50 pF
THD = THD
Measured
– THD
Source
V
IS
= 3.0 V
PP
sine wave
V
IS
= 5.0 V
PP
sine wave
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
dB
mV
PP
%
3.3
5.5
0.30
0.15
Figure 4. On Resistance Test Set–Up
Figure 5. Maximum Off–Channel Leakage Current
Test Set–Up
Figure 6. Maximum On–Channel Leakage Current
Test Set–Up
Figure 7. Propagation Delay Test Set–Up
VHT66–4/6
MC74VHC1GT66
Switch to Position 1 when testing t
PLZ
and t
PZL
Switch to Position 2 when testing t
PHZ
and t
PZH
Figure 8. Propagation Delay Output Enable/Disable
Test Set–Up
Figure 9. Power Dissipation Capacitance
Test Set–Up
Figure 10. Maximum On–Channel Bandwidth
Test Set–Up
Figure 11. Off–Channel Feedthrough Isolation
Test Set–Up
Figure 12. Feedthrough Noise, ON/OFF Control to
Analog Out, Test Set–Up
Figure 13. Total Harmonic Distortion Test
Set–Up
VHT66–5/6
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