MOSFET Single P-Channel Power MOSFET, -30V, -5A, 59m
文档预览
Ordering number : ENA1272B
MCH6341
Power MOSFET
Features
•
•
–30V, 59m
Ω
, –5A, Single P-Channel
http://onsemi.com
Low RDS(on)
Pb-free and RoHS Compliance
•
•
4V drive
ESD diode-Protected gate
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
×0.8mm)
2
Conditions
Ratings
-
-30
±20
-
-5
-
-20
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-009
2.0
0.25
6
5
4
0.15
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
0 to 0.02
Packing Type : TL
Marking
LOT No.
LOT No.
YQ
2.1
1.6
0.25
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
MCPH6
4
1, 2, 5, 6
0.07
0.85
1
2
3
3
6
5
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72814HK TC-00002819/62012TKIM/73008TIIM PE No. A1272-1/5
MCH6341
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=-
-5A, VGS=0V
VDS=-
-15V, VGS=-
-10V, ID=-
-5A
See specified Test Circuit.
VDS=--10V, f=1MHz
Conditions
ID=-
-1mA, VGS=0V
VDS=-
-30V, VGS=0V
VGS=±16V, VDS=0V
VDS=-
-10V, ID=-
-1mA
VDS=-
-10V, ID=-
-3A
ID=-
-3A, VGS=-
-10V
ID=-
-1.5A, VGS=-
-4.5V
ID=-
-1.5A, VGS=-
-4V
--1.2
2.8
4.8
45
71
82
430
105
75
7.5
26
45
35
10
2.0
2.5
--0.87
-
-1.5
59
100
115
Ratings
min
-
-30
--1
±10
--2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
mΩ
mΩ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VIN
VDD= --15V
ID= --3A
RL=5Ω
D
VOUT
VIN
PW=10μs
D.C.≤1%
G
P.G
50Ω
MCH6341
S
Ordering Information
Device
MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
Package
MCPH6
MCPH6
MCPH6
Shipping
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free and Halogen Free
No. A1272-2/5
MCH6341
--6.0
V
--4.
5V
--5.0
ID -- VDS
V --10.0V
.5V
--3
--4
.
0V
--6
--4.5
--4.0
VDS= --10V
ID -- VGS
--5
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
Drain Current, ID -- A
--16.0
--4
--3.0V
--3
--2
--0.1
--0.2
Drain-to-Source Voltage, VDS -- V
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
160
RDS(on) -- VGS
IT13379
Gate-to-Source Voltage, VGS -- V
--1.0
--1.5
Ta=
7
--2.0
VGS= --2.5V
--1
25
°
--2
C
5
°
C
--2.5
--3.0
5
°
C
--3.5
--4.0
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
160
140
120
100
80
60
40
20
0
--60
--40
--20
0
RDS(on) -- Ta
IT13380
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
120
100
80
60
40
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
ID= --1.5A
--3.0A
= --1
, ID
V
--4.5
S=
0A
VG
= --3.
V, I D
= --10
V GS
= --
VGS
= --1
V, I D
4.0
.5A
.5A
Gate-to-Source Voltage, VGS -- V
10
7
VDS= --10V
gFS -- ID
IT13381
Ambient Temperature, Ta --
°
C
20
40
60
80
100
120
140
Forward Transconductance, gFS -- S
5
--10
7
5
3
2
--1.0
7
5
VGS=0V
IS -- VSD
IT13382
160
2
1.0
7
5
3
2
0.1
--0.01
Ta
-2
=-
--0.1
7
5
3
2
2
3
5 7 --0.1
Drain Current, ID -- A
2
3
5 7 --1.0
2
3
2
100
7
5
3
2
10
7
5
3
VDD= --15V
VGS= --10V
SW Time -- ID
5 7 --10
HD13383
--0.01
--0.2
--0.4
1000
7
Ciss, Coss, Crss -- VDS
Ciss
Forward Diode Voltage,
VSD -- V
--0.6
--25
°
C
--0.8
Ta=7
5
°
C
25
°
C
25
°
C
7
C
5
°
Source Current, IS -- A
3
C
5
°
3
2
--1.0
--1.2
HD13384
f=1MHz
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
tf
td(off)
5
3
2
tr
td(on)
100
7
5
3
Crss
Coss
2
--0.1
2
3
Drain Current, ID -- A
5
7
--1.0
2
3
5
7
IT13385
--10
0
--5
Drain-to-Source Voltage, VDS -- V
--10
--15
--20
--25
--30
IT13386
No. A1272-3/5
MCH6341
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, VGS -- V
VDS= --15V
ID= --5A
VGS -- Qg
3
2
5
SOA
IDP= --20A (PW
≤
10μs)
ID= --5A
10
0
μ
s
Drain Current, ID -- A
--10
7
5
3
2
DC
--1.0
7
5
3
2
op
er
ati
o
--0.1
7
5
3
2
Operation in this
area is limited by RDS(on).
Ta=25
°
C
Single pulse
When mounted on ceramic substrate
(1200mm
2
×0.8mm)
5 7 --0.1
2 3
5 7 --1.0
n(
Ta
=
10
10
ms
0m
s
1m
s
25
°
C
)
Total Gate Charge, Qg -- nC
2.0
1.8
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
When mounted on ceramic substrate
(1200mm
2
×0.8mm)
PD -- Ta
IT13387
--0.01
--0.01 2 3
Drain-to-Source Voltage, VDS -- V
2 3
5 7 --10
2 3
5
HD13895
Dissipation, PD -- W
Ambient Temperature, Ta --
°
C
60
80
100
120
140
HD13896
160
No. A1272-4/5
MCH6341
Outline Drawing
MCH6341-TL-E, MCH6341-TL-H, MCH6341-TL-W
Mass (g) Unit
0.008 mm
* For reference
Land Pattern Example
Unit: mm
0.4
0.6
2.1
0.65 0.65
Note on usage : Since the MCH6341 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
FPGA/CPLD
