MCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
•
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
•
Blocking Voltage to 600 Volts
•
On–State Current Rating of 0.8 Amperes RMS at 80°C
•
High Surge Current Capability — 10 Amperes
•
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
•
Immunity to dV/dt — 20 V/µsec Minimum at 110°C
•
Glass-Passivated Surface for Reliability and Uniformity
•
Device Marking: Device Type, e.g., MCR100–3, Date Code
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = 40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
MCR100–3
MCR100–4
MCR100–6
MCR100–8
Symbol
VDRM,
VRRM
Value
Unit
Volts
100
200
400
600
0.8
10
Amp
Amps
1
Preferred Device
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SCRs
0.8 AMPERES RMS
100 thru 600 VOLTS
G
A
K
*
2
3
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(TA = 25°C, Pulse Width
IT(RMS)
ITSM
TO–92 (TO–226AA)
CASE 029
STYLE 10
PIN ASSIGNMENT
I2t
PGM
PG(AV)
IGM
VGRM
TJ
Tstg
0.415
0.1
0.10
1.0
5.0
–40 to
110
–40 to
150
A2s
Watt
Watt
Amp
Volts
°C
°C
1
2
3
Cathode
Gate
Anode
v
1.0
µ
s)
v
v
Forward Average Gate Power
(TA = 25°C, t = 8.3 ms)
Forward Peak Gate Current
(TA = 25°C, Pulse Width
1.0
µ
s)
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width
1.0
µ
s)
Operating Junction Temperature Range
@ Rate VRRM and VDRM
Storage Temperature Range
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 571 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2000
566
May, 2000 – Rev. 4
Publication Order Number:
MCR100/D
MCR100 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Lead Solder Temperature
( 1/16″ from case, 10 secs max)
Symbol
R
θJC
R
θJA
TL
Max
75
200
260
Unit
°C/W
°C
t
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1)
(VD = Rated VDRM and VRRM; RGK = 1 kΩ)
TC = 25°C
TC = 110°C
IDRM, IRRM
—
—
—
—
10
100
µA
ON CHARACTERISTICS
Peak Forward On–State Voltage(*)
(ITM = 1.0 Amp Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)(2)
(VAK = 7.0 Vdc, RL = 100 Ohms)
Holding Current (2)
(VAK = 7.0 Vdc, Initiating Current = 20 mA)
Latch Current
(VAK = 7.0 V, Ig = 200
µA)
Gate Trigger Voltage (Continuous dc)(2)
(VAK = 7.0 Vdc, RL = 100 Ohms) TC = –40°C
VTM
TC = 25°C
TC = 25°C
TC = –40°C
TC = 25°C
TC = –40°C
TC = 25°C
IGT
IH
IL
VGT
—
—
—
—
—
—
—
—
—
40
0.5
—
0.6
—
0.62
—
1.7
200
5.0
10
10
15
0.8
1.2
Volts
µA
mA
mA
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
Critical Rate of Rise of On–State Current
(IPK = 20 A; Pw = 10
µsec;
diG/dt = 1 A/µsec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width
≤
1.0 ms, Duty Cycle
≤
1%.
(1) RGK = 1000 Ohms included in measurement.
(2) Does not include RGK in measurement.
dV/dt
20
35
—
V/µs
di/dt
—
—
50
A/µs
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567
MCR100 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
on state
IRRM at VRRM
IH
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
100
GATE TRIGGER VOLTAGE (VOLTS)
95
90
GATE TRIGGER CURRENT (
m
A)
80
70
60
50
40
30
20
10
–40 –25 –10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
110
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
–40 –25 –10
5
20 35 50
65 80
TJ, JUNCTION TEMPERATURE (°C)
95
110
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
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568
MCR100 Series
1000
1000
100
LATCHING CURRENT (
m
A)
95
110
HOLDING CURRENT (
m
A)
100
10
–40 –25 –10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
10
–40 –25 –10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
110
Figure 3. Typical Holding Current versus
Junction Temperature
Figure 4. Typical Latching Current versus
Junction Temperature
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)
120
110
100
90
DC
80
70
60
50
40
0
0.1
30°
60°
90°
120°
0.5
180°
10
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1
0.2
0.3
0.4
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.1
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. Typical RMS Current Derating
Figure 6. Typical On–State Characteristics
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569
MCR100 Series
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A
H2A
H2B
H2B
H
W2
H4 H5
L1
L
F1
F2
P2
P1
P
P2
D
H1
W1 W
T
T2
T1
Figure 7. Device Positioning on Tape
Specification
Inches
Symbol
D
D2
F1, F2
H
H1
H2A
H2B
H4
H5
L
L1
P
P1
P2
T
T1
T2
W
W1
W2
Millimeter
Max
Min
3.8
0.38
2.4
1.5
8.5
0
0
18
15.5
8.5
2.5
12.5
5.95
3.55
0.15
—
0.35
17.5
5.5
.15
Item
Tape Feedhole Diameter
Component Lead Thickness Dimension
Component Lead Pitch
Bottom of Component to Seating Plane
Feedhole Location
Deflection Left or Right
Deflection Front or Rear
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
Feedhole Pitch
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
Carrier Strip Width
Adhesive Tape Width
Adhesive Tape Position
Min
0.1496
0.015
0.0945
.059
0.3346
0
0
0.7086
0.610
0.3346
0.09842
0.4921
0.2342
0.1397
0.06
—
0.014
0.6889
0.2165
.0059
Max
4.2
0.51
2.8
4.0
9.5
1.0
1.0
19.5
16.5
11
—
12.9
6.75
3.95
0.20
1.44
0.65
19
6.3
0.5
0.1653
0.020
0.110
.156
0.3741
0.039
0.051
0.768
0.649
0.433
—
0.5079
0.2658
0.1556
0.08
0.0567
0.027
0.7481
0.2841
0.01968
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
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