PHOTOTRANSISTOR OPTOCOUPLERS
MCT2
MCT2200
MCT2E
MCT2201
MCT210
MCT2202
MCT271
WHITE PACKAGE (-M SUFFIX)
BLACK PACKAGE (NO -M SUFFIX)
6
1
6
1
6
1
6
1
6
1
6
1
DESCRIPTION
The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
FEATURES
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
– Add option V for white package (e.g., MCT2V-M)
– Add option 300 for black package (e.g., MCT2.300)
• MCT2 and MCT2E are also available in white package by specifying -M suffix, eg. MCT2-M
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
1
6
2
5
3
NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
© 2003 Fairchild Semiconductor Corporation
Page 1 of 14
10/10/03
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2
MCT2200
MCT2E
MCT2201
MCT210
MCT2202
MCT271
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
P
D
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector Current
Collector-Emitter Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
I
C
V
CEO
I
F
V
R
I
F
(pk)
P
D
Symbol
T
STG
T
OPR
T
SOL
Device
ALL
ALL
ALL
-M
Non-M
-M
Non-M
-M
Non-M
ALL
ALL
-M
Non-M
-M
Non-M
ALL
ALL
ALL
-M
Non-M
Value
-55 to +150
-55 to +100
260 for 10 sec
250
260
2.94
3.3
60
100
3
3
120
150
1.41
2.0
50
30
150
1.76
2.0
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
V
mW
mW/°C
© 2003 Fairchild Semiconductor Corporation
Page 2 of 14
10/10/03
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2
MCT2200
MCT2E
MCT2201
MCT210
MCT2202
MCT271
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter
EMITTER
MCT2/-M
MCT2E/-M
MCT271
MCT2200
MCT2201
MCT2202
MCT210
MCT2/-M
MCT2E/-M
MCT271
MCT2200
MCT2201
MCT2202
MCT210
BV
CEO
ALL
MCT210
MCT2/-M
MCT2E/-M
MCT271
MCT2200
MCT2201
MCT2202
MCT210
MCT2/-M
MCT2E/-M
MCT271
MCT2200
MCT2201
MCT2202
MCT210
I
CEO
I
CBO
C
CE
ALL
ALL
ALL
8
30
100
V
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
Input Forward Voltage
(I
F
= 20 mA)
V
F
1.25
1.50
V
(T
A
= 0-70°C, I
F
= 40 mA)
1.33
Reverse Leakage Current
(V
R
= 3.0 V)
I
R
0.001
10
µA
(T
A
= 0-70°C, V
R
= 6.0 V)
DETECTOR
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
F
= 0)
(T
A
= 0-70°C)
Collector-Base Breakdown Voltage
(I
C
= 10 µA, I
F
= 0)
BV
CBO
70
120
V
(T
A
= 0-70°C)
30
Emitter-Collector Breakdown Voltage
(I
E
= 100 µA, I
F
= 0)
BV
ECO
7
10
V
(T
A
= 0-70°C)
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
** Typical values at T
A
= 25°C
(V
CE
= 10 V, I
F
= 0)
(V
CE
= 5 V, T
A
= 0-70°C)
(V
CB
= 10 V, I
F
= 0)
(V
CE
= 0 V, f = 1 MHz)
6
10
1
50
30
20
nA
µA
nA
pF
© 2003 Fairchild Semiconductor Corporation
Page 3 of 14
10/10/03
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2
MCT2200
MCT2E
MCT2201
MCT210
MCT2202
MCT271
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
(T
A
= 0-70°C)
(I
F
= 10 mA, V
CE
= 5 V)
Symbol
Device
MCT210
MCT2200
MCT2201
MCT2202
Output Collector
Current
CTR
(I
F
= 10 mA, V
CE
= 10 V)
MCT2
MCT2-M
MCT2E
MCT2E-M
MCT271
(I
F
= 3.2 mA to 32 mA, V
CE
= 0.4 V)
(T
A
= 0-70°C)
MCT210
MCT2
MCT2-M
MCT2E
MCT2E-M
MCT271
MCT210
MCT2200
MCT2201
MCT2202
MCT2
t
on
MCT2E
MCT2
MCT2E
MCT2
t
off
MCT2E
MCT2
MCT2E
t
on
t
off
t
r
t
f
MCT2-M
MCT2E-M
MCT2-M
MCT2E-M
MCT2-M
MCT2E-M
MCT2-M
MCT2E-M
1.1
1.1
1.3
1.3
50
50
20
20
2
2
2
1.5
µs
Min
150
20
100
63
125
%
20
Typ**
Max
Unit
45
50
90
(I
C
= 2 mA, I
F
= 16 mA)
Collector-Emitter
Saturation Voltage
V
CE (SAT)
(I
C
= 16 mA, I
F
= 32 mA, T
A
= 0-70°C)
(I
C
= 2.5 mA, I
F
= 10 mA)
AC Characteristic
Saturated Turn-on
Time from 5 V to
0.8 V
(I
F
= 15 mA, V
CC
= 5 V, R
L
= 2 k
Ω
)
(R
B
= Open) (Fig. 20)
(I
F
= 20 mA, V
CC
= 5 V, R
L
= 2 k
Ω
)
(R
B
= 100 k
Ω
) (Fig. 20)
(I
F
= 15 mA, V
CC
= 5 V, R
L
= 2 k
Ω
)
(R
B
= Open) (Fig. 20)
(I
F
= 20 mA, V
CC
= 5 V, R
L
= 2 k
Ω
)
(R
B
= 100 k
Ω
) (Fig. 20)
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
Ω)
0.4
V
Saturated Turn-off
Time from SAT to
2.0 V
Turn-on Time
Turn-off Time
Rise Time
Fall Time
** Typical values at T
A
= 25°C
© 2003 Fairchild Semiconductor Corporation
Page 4 of 14
10/10/03
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2
MCT2200
MCT2E
MCT2201
MCT210
MCT2202
MCT271
TRANSFER CHARACTERISTICS
(Cont.)
AC Characteristic
Saturated turn-on time
Saturated turn-off time
(Approximates a typical
TTL interface)
Saturated turn-on time
Saturated turn-off time
(Approximates a typical
low power TTL interface)
Saturated rise time
Saturated fall time
Saturated propagation
delay - high to low
Saturated propagation
delay - low to high
Non-saturated
turn on time
Non-saturated
turn off time
Non-saturated rise time
Non-saturated fall time
Non-saturated
turn-on time
Non-saturated
turn-off time
** Typical values at T
A
= 25°C
(I
F
= 16 mA, R
L
= 4.7kΩ, V
CC
= 5 V)
(Fig. 20)
(I
F
= 16 mA, R
L
= 560Ω, V
CC
= 5 V)
(Fig. 20, 21)
(I
F
= 16 mA, R
L
= 1.9kΩ, V
CC
= 5 V)
(Fig. 20)
Test Conditions
Symbol
t
on
t
off
t
on
t
off
t
r
t
f
T
PD (HL)
(I
F
= 16 mA, R
L
= 2.7kΩ) (Fig. 20, 21)
T
PD (LH)
T
ON
T
OFF
t
r
t
f
t
on
MCT271
t
off
2
7
MCT2200
MCT2201
MCT2202
MCT210
50
2
2
2
2
2
7
10
10
MCT210
MCT271
Device
Min
Typ**
1.0
48
1.0
98
1.0
11
1.0
µs
Max
Unit
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100Ω
(Fig. 20)
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 100Ω)
(Fig. 20)
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 100Ω)
(Fig. 20)
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Note
* Typical values at T
A
= 25°C
Test Conditions Symbol
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
(V
I-O
= 500 VDC)
(V
I-O
= &, f = 1 MHz)
(‘-M’ White Package)
V
ISO
R
ISO
C
ISO
Min
5300
7500
10
11
0.5
0.2
2
Typ*
Max
Units
Vac(rms)
Vac(pk)
Ω
pF
pF
© 2003 Fairchild Semiconductor Corporation
Page 5 of 14
10/10/03
