E2G0135-18-11
¡ Semiconductor
MD51V64400
¡ Semiconductor
This version: Mar. 1998
MD51V64400
16,777,216-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MD51V64400 is a 16,777,216-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MD51V64400 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MD51V64400 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.
FEATURES
• 16,777,216-word
¥
4-bit configuration
• Single 3.3 V power supply,
±0.3
V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh :
RAS-only
refresh
: 8192 cycles/64 ms
CAS
before
RAS
refresh, hidden refresh
: 4096 cycles/64 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
32-pin 400 mil plastic SOJ
(SOJ32-P-400-1.27)
(Product : MD51V64400-xxJA)
32-pin 400 mil plastic TSOP
(TSOPII32-P-400-1.27-K) (Product : MD51V64400-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Family
MD51V64400-50
MD51V64400-60
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
504 mW
432 mW
1.8 mW
1/15
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
32 V
SS
V
CC
1
32 V
SS
DQ1 2
31 DQ4
DQ1 2
DQ2 3
NC 4
NC 5
31 DQ4
30 DQ3
29 NC
28 NC
DQ2 3
NC 4
NC 5
NC 6
NC 7
30 DQ3
29 NC
28 NC
27 NC
25
OE
NC 6
NC 7
27 NC
25
OE
26
CAS
26
CAS
WE
8
WE
8
RAS
9
24 A12R
23 A11R
22 A10
21 A9
20 A8
19 A7
RAS
9
24 A12R
23 A11R
22 A10
21 A9
20 A8
19 A7
A0 10
A1 11
A2 12
A3 13
A4 14
A0 10
A1 11
A2 12
A3 13
A4 14
A5
15
V
CC
16
MD51V64400
A5 15
V
CC
16
32-Pin Plastic SOJ
18 A6
17 V
SS
18
A6
17 V
SS
32-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A10,
A11R, A12R
RAS
CAS
DQ1 - DQ4
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/15
¡ Semiconductor
MD51V64400
BLOCK DIAGRAM
WE
RAS
CAS
11
OE
I/O
Controller
Output
Buffers
4
Timing
Generator
4
DQ1 - DQ4
Column
Address
Buffers
Internal
Address
Counter
11
11
Column Decoders
4
Input
Buffers
4
A0 - A10
Refresh
Control Clock
Sense Amplifiers
4
I/O
Selector
4
A11R, A12R
2
Row
Row
Address
13
Deco-
Buffers
ders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
3/15
¡ Semiconductor
MD51V64400
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance
(A0 - A10, A11R, A12R)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/15
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
MD51V64400
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Condition
MD51V64400
-50
Min.
V
OH
I
OH
= –2.0 mA
V
OL
I
OL
= 2.0 mA
0 V
£
V
I
£
V
CC
+ 0.3 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
—
80
—
70
mA 1, 3
—
140
—
120
mA 1, 2
—
5
—
5
mA
1
—
100
—
90
mA 1, 2
–10
10
–10
10
mA
2.4
0
Max.
V
CC
0.4
MD51V64400
-60
Min.
2.4
0
Max.
V
CC
0.4
V
V
Unit Note
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
mA
I
CC1
—
—
—
100
1
0.5
—
—
—
90
1
0.5
mA 1, 2
mA
1
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/15
