MCD56-08io8B
Thyristor \ Diode Module
V
RRM
I
TAV
V
T
=
2x 800 V
=
=
60 A
1.24 V
Phase leg
Part number
MCD56-08io8B
Backside: isolated
3
1
5 2
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MCD56-08io8B
Rectifier
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 125 °C
T
VJ
= 125 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
900
V
800
200
5
1.26
1.57
1.24
1.62
60
94
0.85
3.7
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 125 °C
74
10
5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
= 150 A
t
P
= 200 µs; di
G
/dt = 0.45 A/µs;
I
G
= 0.45 A; V =
⅔
V
DRM
non-repet., I
T
=
60 A
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
10 µs
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
150
222
1.50
1.62
1.28
1.38
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R/D
= 800 V
V
R/D
= 800 V
I
T
= 100 A
I
T
= 200 A
I
T
= 100 A
I
T
= 200 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.45 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
11.3 kA²s
10.9 kA²s
8.13 kA²s
7.87 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
1.5
1.6
100
200
0.2
10
450
200
2
V
V
mA
mA
V
mA
mA
mA
µs
µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
turn-off time
V
R
= 100 V; I
T
= 150 A; V =
⅔
V
DRM
T
VJ
=100 °C
di/dt = 10 A/µs dv/dt =
20 V/µs t
p
= 200 µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MCD56-08io8B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
125
100
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
81
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
Ordering
Standard
Ordering Number
MCD56-08io8B
Marking on Product
MCD56-08io8B
Delivery Mode
Box
Quantity
36
Code No.
457698
Similar Part
MCMA65PD1200TB
MCMA85PD1200TB
Package
TO-240AA-1B
TO-240AA-1B
Voltage class
1200
1200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 125 °C
V
0 max
R
0 max
0.85
2.5
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MCD56-08io8B
Outlines TO-240AA
3
1
5 2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MCD56-08io8B
Thyristor
1500
50 Hz, 80% V
RRM
10
5
V
R
= 0 V
100
120
DC
180° sin
120°
60°
30°
1000
80
I
TSM
I
FSM
[A]
500
I
2
t
T
VJ
= 45°C
10
4
T
VJ
= 45°C
I
TAVM
60
[A
2
s]
T
VJ
=
125°C
[A]
T
VJ
= 125°C
40
20
0
10
-3
10
3
10
-2
10
-1
10
0
10
1
1
2
3
6
8
10
0
0
50
100
150
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
150
t [ms]
Fig. 2 I
2
t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Maximum forward current
at case temperature
10
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thJA
[K/W]
0.8
1
1.2
100
1.5
2
2.5
3
V
G
1
1
2
3
5
4
6
P
T
[W]
50
DC
180° sin
120°
60°
30°
[V]
4
I
GD
, T
VJ
= 125°C
0
0
20
40
60
80
0
50
100
150
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
10
2
10
3
10
4
0.1
10
0
10
1
I
TAVM
, I
FAVM
[A]
T
A
[°C]
I
G
[mA]
Fig. 5 Gate trigger charact.
1000
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
600
R
thKA
[K/W]
0.1
500
0.15
0.2
400
0.25
0.3
300
0.4
0.5
200
Circuit
B6
3x MCC56 or
3x MCD56
0.6
T
VJ
= 25°C
100
typ.
Limit
P
tot
[W]
t
gd
[µs]
10
100
0
0
50
100
150
0
50
100
150
1
10
100
1000
I
dAVM
[A]
T
A
[°C]
I
G
[mA]
Fig. 7 Gate trigger delay time
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
