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MGBR30V60CG-TF3-T

DUAL MOS GATED BARRIER RECTIFIER

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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UNISONIC TECHNOLOGIES CO., LTD
MGBR30V60C
DUAL MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC
MGBR30V60C
is a dual mos gated barrier rectifiers, it
uses UTC’s advanced technology to provide customers with low
forward voltage drop and high switching speed, etc.
DIODE
FEATURES
* Very low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR30V60CL-TA3-T
MGBR30V60CG-TA3-T
MGBR30V60CL-TF3-T
MGBR30V60CG-TF3-T
Note: Pin Assignment: A: Anode
K: Cathode
Package
TO-220
TO-220F
Pin Assignment
1
2
3
A
K
A
A
K
A
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R601-112.C
MGBR30V60C
ABSOLUTE MAXIMUM RATINGS (PER LEG)
(T
A
=25°C unless otherwise specified)
DIODE
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
60
V
Working Peak Reverse Voltage
V
RWM
60
V
Peak Repetitive Reverse Voltage
V
RRM
60
V
Per Leg
15
A
Average Rectified Output Current Per Device
I
O
Total
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
250
A
Single Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (PER LEG)
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2
3.31
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (PER LEG)
(T
A
=25°C
unless otherwise specified.)
TEST CONDITIONS
I
R
=0.60mA
I
F
=15A, T
J
=25°C
Forward Voltage Drop
V
FM
I
F
=15A, T
J
=125°C
V
R
=60V, T
J
=25°C
Leakage Current (Note 1)
I
RM
V
R
=60V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
PARAMETER
Reverse Breakdown Voltage (Note 1)
SYMBOL
V
(BR)R
MIN
60
TYP MAX UNIT
V
0.60
V
0.55
V
500
μA
100 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-112.C
MGBR30V60C
TYPICAL CHARACTERISTICS
DIODE
Forward Derating Curve
Average Rectified Current (A)
21
18
15
12
9
6
3
0
0
25
50
75
100 125 150 175
Instantaneous Forward Current (A)
Typical Forward Characteristics
100
25°C
10
1.0
IF Pulse
Width=300uS
0.1
0.2
0.4
0.6
0.8
1.0
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Typical Reverse Characteristics
1E-1
Instantaneous Reverse Current (A)
1E-2
1E-3
1E-4
1E-5
1E-6
1E-7
V
R
=60V
25
50
100
125
75
Case Temperature (°C)
150
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-112.C
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参数对比
与MGBR30V60CG-TF3-T相近的元器件有:MGBR30V60CG-TA3-T、MGBR30V60CL-TA3-T、MGBR30V60CL-TF3-T、MGBR30V60C_15。描述及对比如下:
型号 MGBR30V60CG-TF3-T MGBR30V60CG-TA3-T MGBR30V60CL-TA3-T MGBR30V60CL-TF3-T MGBR30V60C_15
描述 DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER
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器件捷径:
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