MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0920A
L & S BAND GaAs FET
[ SMD non
–
matched ]
DESCRIPTION
The MGF0920A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
•
High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
•
High power gain
Gp=18dB(TYP.) @f=1.9GHz
•
High power added efficiency
ηadd=45%(TYP.)
@f=1.9GHz,Pin=15dBm
•
Hermetic Package
APPLICATION
•
For UHF Band power amplifiers
Fig.1
QUALITY
•
GG
RECOMMENDED BIAS CONDITIONS
•
Vds=10V
•
Ids=400mA
•
Rg=200Ω
Delivery
-01:Tape
& Reel(1K),
-03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
Symbol
V
GSO
V
GDO
I
D
I
GR
I
GF
P
T
Tch
Tstg
Parameter
Gate to sourcebreakdown voltage
Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
1500
-3.6
15
8.3
175
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Electrical characteristics
Symbol
I
DSS
V
GS(off)
gm
Po
ηadd
G
LP
Rth(ch-c)
(Ta=25°C)
Parameter
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *1
Test conditions
Min.
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=3.0mA
V
DS
=3V,I
D
=400mA
V
DS
=10V,I
D
=400mA,f=1.9GHz
Pin=15dBm
V
DS
=10V,I
D
=400mA,f=1.9GHz
∆Vf
Method
-
-1.0
-
30
-
16
-
Limits
Typ.
1000
-
370
32
35
18
13
Max.
1500
-5.0
-
-
-
-
18
Unit
mA
V
mS
dBm
%
dB
°C/W
*1:
Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0920A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pi
35
30
70
60
Po
Vds=10V
Id(off)=400mA
f=1.9GHz
25
50
PAE
Gp(dB),PAE(%)
Po(dBm)
20
40
15
Gp
10
30
20
5
10
0
-10
-5
0
5
Pin(dBm)
10
15
20
0
Pi(SCL) vs.Po(SCL),IM3
40
35
30
25
20
15
10
5
0
-5
-10
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
5
10
15
20
VD=10V
ID=400mA
f1=1.90GHz
f2=1.91GHz
Po(SCL)(dBm)
Po
IM3
-15
-10
-5
0
Pin(SCL)(dBm)
Mitsubishi Electric
IM3(dBc)
June/2004
MGF0920A
freq.
(MHz)
600
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
S PARAMETERS
S11
(ang)
-96.03
-124.52
-140.36
-149.63
-155.96
-161.19
-165.84
-169.78
-172.74
-174.91
-177.52
178.90
176.64
172.31
167.25
162.24
157.65
153.50
149.52
145.30
140.29
133.94
125.77
115.44
102.87
88.25
72.23
55.90
40.93
29.66
(Ta=25
°
C,VD=10V,ID=400mA, Reference Plane see Fig.1)
S21
S12
(mag)
0.019
0.023
0.024
0.024
0.022
0.021
0.020
0.019
0.019
0.020
0.021
0.023
0.025
0.028
0.031
0.034
0.039
0.044
0.050
0.058
0.067
0.078
0.093
0.110
0.131
0.156
0.186
0.221
0.260
0.305
(ang)
39.54
26.68
17.80
12.03
8.64
7.04
6.70
7.24
8.31
9.66
11.07
12.38
13.47
14.22
14.56
14.40
13.69
12.36
10.31
7.49
3.78
-0.92
-6.73
-13.79
-22.25
-32.28
-44.04
-57.73
-73.53
-91.61
2.0
S22
(mag)
0.367
0.427
0.476
0.516
0.552
0.583
0.612
0.638
0.662
0.684
0.703
0.718
0.730
0.738
0.742
0.744
0.743
0.739
0.734
0.728
0.720
0.712
0.703
0.690
0.671
0.644
0.601
0.537
0.440
0.300
(ang)
-155.36
-155.22
-154.99
-154.82
-154.81
-155.02
-155.50
-156.24
-157.24
-158.46
-159.84
-161.35
-162.91
-164.48
-166.00
-167.44
-168.79
-170.03
-171.21
-172.37
-173.62
-175.10
-176.99
-179.52
176.62
172.09
167.44
162.49
158.74
165.54
K
0.25
0.32
0.42
0.54
0.75
0.91
1.06
1.20
1.24
1.20
1.19
1.15
1.15
1.14
1.18
1.24
1.20
1.16
1.10
0.99
0.90
0.82
0.75
0.74
0.73
0.72
0.70
0.66
0.61
0.58
MAG/MSG
(mag)
0.930
0.912
0.903
0.899
0.899
0.900
0.901
0.901
0.900
0.897
0.893
0.887
0.880
0.871
0.861
0.849
0.836
0.822
0.805
0.785
0.761
0.730
0.690
0.638
0.588
0.547
0.534
0.562
0.641
0.770
(mag)
7.784
5.692
4.233
3.242
2.584
2.156
1.879
1.696
1.565
1.462
1.370
1.283
1.199
1.121
1.054
1.003
0.971
0.963
0.978
1.016
1.071
1.139
1.212
1.282
1.344
1.393
1.431
1.464
1.509
1.597
(ang)
119.71
100.24
85.39
73.85
64.56
56.76
49.88
43.51
37.40
31.40
25.42
19.44
13.46
7.49
1.52
-4.44
-10.45
-16.57
-22.92
-29.63
-36.87
-44.85
-53.74
-63.76
-75.07
-87.81
-102.03
-117.69
-134.63
-152.53
(dB)
26.12
23.94
22.46
21.31
20.70
20.11
18.23
16.82
16.23
15.95
15.54
15.13
14.48
13.73
12.76
11.78
11.27
10.94
10.98
12.43
12.04
11.64
11.15
10.66
10.11
9.51
8.86
8.21
7.64
7.19
Gate Mark
Round corner
(1)
0.80
0.8
Gate Mark
(1)
Reference Plane
1.20
4.20
(3)
Reference Plane
(2)
4.00
0.25
(2)
0.6
2.5
(1) Gate
(2) Drain
(3) Source
0.3
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
Mitsubishi Electric
June/2004
2.8
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0920A
L & S BAND GaAs FET
[ SMD non
–
matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other
problem s. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy
design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our
products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the
highest levels of safety in the products when in use by customers.
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f
responsibility for the propriety of application.
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Mitsubishi Electric
June/2004
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