INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
MJ10002
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 350V (Min.)
·High
Switching Speed
APPLICATIONS
Designed for high voltage, high speed , power switching in
Inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications as:
·Switching
Regulators
·Inverters
·Solenoid
and Relay Drivers
·Motor
Controls
·Deflection
Circuits
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CEO(SUS)
V
CEX(SUS)
V
CEV
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
350
400
450
8
10
20
2.5
5.0
150
200
-65~200
UNIT
V
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJ10002
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.25A; I
B
= 0
I
C
= 5A; I
B
= 0.25A
I
C
= 5A; I
B
= 0.25A, T
C
= 100℃
B
B
350
1.9
2.0
2.9
2.5
2.5
0.25
5.0
5.0
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 10A; I
B
= 1A
I
C
= 5A; I
B
= 0.25A
I
C
= 5A; I
B
= 0.25A, T
C
= 100℃
B
B
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
I
CEV
Collector Cutoff Current
V
CE
=450V;V
BE(
off
)
=1.5V
V
CE
=450V;V
BE(
off
)
=1.5V;T
C
=150℃
V
CE
= 450V; R
BE
= 50Ω; T
C
= 100℃
mA
I
CER
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
V
EB
= 8V; I
C
= 0
175
mA
h
FE-1
DC Current Gain
I
C
= 2.5A, V
CE
= 5V
40
h
FE-2
DC Current Gain
I
C
= 5A, V
CE
= 5V
30
V
ECF
C-E Diode Forward Voltage
I
F
= 5A
5.0
V
C
OB
Output Capacitance
I
E
= 0, V
CB
= 50V; f
test
= 0.1MHz
60
275
pF
Switching Times; Resistive Load
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
0.05
0.25
1.2
0.6
0.2
0.6
3.0
1.5
μs
μs
μs
μs
V
CC
= 250V; I
C
= 5A; I
B1
= 0.25A
V
BE(
off
)
= 5V
t
p
= 50μs, Duty Cycle≤2%
isc Website：www.iscsemi.cn
