See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
September, 2008
−
Rev. 6
1
Publication Order Number:
MJ11028/D
MJ11028, MJ11030, MJ11032 (NPN)
PNP
MJ11029
MJ11033
BASE
COLLECTOR
NPN
MJ11028
MJ11030
MJ11032
BASE
COLLECTOR
≈
3.0 k
≈
25
≈
3.0 k
≈
25
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1 00 mAdc, I
B
= 0)
Collector−Emitter Leakage Current
(V
CE
= 60 Vdc, R
BE
= 1 kW)
(V
CE
= 90 Vdc, R
BE
= 1 kW)
(V
CE
= 120 Vdc, R
BE
= 1 kW)
(V
CE
= 60 Vdc, R
BE
= 1 kW, T
C
= 150_C)
(V
CE
= 120 Vdc, R
BE
= 1 kW, T
C
= 150_C)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
Collector−Emitter Leakage Current
(V
CE
= 50 Vdc, I
B
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 25 Adc, V
CE
= 5 Vdc)
(I
C
= 50 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 25 Adc, I
B
= 250 mAdc)
(I
C
= 50 Adc, I
B
= 500 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 25 Adc, I
B
= 200 mAdc)
(I
C
= 50 Adc, I
B
= 300 mAdc)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
h
FE
1k
400
−
−
−
−
18 k
−
2.5
3.5
3.0
4.5
−
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
V
(BR)CEO
60
90
120
−
−
−
−
−
−
−
−
−
−
2
2
2
10
10
5
2
Vdc
Symbol
Min
Max
Unit
I
CER
mAdc
I
EBO
I
CEO
mAdc
mAdc
V
CE(sat)
Vdc
V
BE(sat)
Vdc
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2
MJ11028, MJ11030, MJ11032 (NPN)
ORDERING INFORMATION
Device
MJ11028
MJ11028G
MJ11029
MJ11029G
MJ11030
MJ11030G
MJ11032
MJ11032G
MJ11033
MJ11033G
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
100 Units / Tray
Shipping
100
IC, COLLECTOR CURRENT (AMP)
50
20
10
5
2
1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
0.5
0.2
0.1
0.2
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
200
0.5
1
2
5
10 20
50 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
100 k
50 k
hFE, DC CURRENT GAIN
20 k
10 k
5k
2k
1k
500
200
100
1
2
5
10
20
80
ms
(PULSED)
50
100
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
V
CE
= 5 V
T
J
= 25°C
5
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
4
3
T
J
= 25°C
I
C
/I
B
= 100
V
BE(sat)
2
1
V
CE(sat)
1
2
3
5
10
20
I
C
, COLLECTOR CURRENT (AMP)
80
ms
(PULSED)
50
100
0
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
Figure 4. “On” Voltage
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3
MJ11028, MJ11030, MJ11032 (NPN)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
A
N
C
E
D
2 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
−T−
K
M
SEATING
PLANE
0.30 (0.012)
T Q
M
Y
M
V
2
U
L
G
−Y−
B
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
H
1
−Q−
0.25 (0.010)
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
T Y
ON Semiconductor
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