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MJ11030G

Darlington Transistors BIP NPN 50A 90V FG

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
零件包装代码
TO-3
包装说明
LEAD FREE, CASE 197A-05, TO-3, 2 PIN
针数
2
制造商包装代码
197A-05
Reach Compliance Code
not_compliant
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
50 A
集电极-发射极最大电压
90 V
配置
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)
400
JEDEC-95代码
TO-204AA
JESD-30 代码
O-MBFM-P2
JESD-609代码
e1
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
260
极性/信道类型
NPN
最大功率耗散 (Abs)
300 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
PIN/PEG
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 1000 (Min) @ I
C
= 25 Adc
h
FE
= 400 (Min) @ I
C
= 50 Adc
Curves to 100 A (Pulsed)
Diode Protection to Rated I
C
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
Junction Temperature to + 200_C
Pb−Free Packages are Available*
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60
120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
BASE
1
BASE
1
PNP
COLLECTOR
CASE
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
MJ11028/29
MJ11030
MJ11032/33
MJ11028/29
MJ11030
MJ11032/33
Symbol
V
CEO
Value
60
90
120
60
90
120
5.0
50
100
2.0
300
1.71
55 to +200
Unit
Vdc
EMITTER 2
MJ11028
MJ11030
MJ11032
EMITTER 2
MJ11029
MJ11033
Collector−Base Voltage
V
CBO
Vdc
Emitter−Base Voltage
Collector Current
Continuous
Peak (Note 1)
Base Current
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C @ T
C
= 100_C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
W/°C
°C
2
1
MARKING
DIAGRAM
TO−204 (TO−3)
CASE 197A
STYLE 1
MJ110xxG
AYYWW
MEX
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
Maximum Lead Temperature for
Soldering Purposes for
v
10 seconds
T
L
275
_C
Thermal Resistance, Junction−to−Case
R
qJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
Characteristic
Symbol
Max
Unit
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
September, 2008
Rev. 6
1
Publication Order Number:
MJ11028/D
MJ11028, MJ11030, MJ11032 (NPN)
PNP
MJ11029
MJ11033
BASE
COLLECTOR
NPN
MJ11028
MJ11030
MJ11032
BASE
COLLECTOR
3.0 k
25
3.0 k
25
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1 00 mAdc, I
B
= 0)
Collector−Emitter Leakage Current
(V
CE
= 60 Vdc, R
BE
= 1 kW)
(V
CE
= 90 Vdc, R
BE
= 1 kW)
(V
CE
= 120 Vdc, R
BE
= 1 kW)
(V
CE
= 60 Vdc, R
BE
= 1 kW, T
C
= 150_C)
(V
CE
= 120 Vdc, R
BE
= 1 kW, T
C
= 150_C)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
Collector−Emitter Leakage Current
(V
CE
= 50 Vdc, I
B
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 25 Adc, V
CE
= 5 Vdc)
(I
C
= 50 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 25 Adc, I
B
= 250 mAdc)
(I
C
= 50 Adc, I
B
= 500 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 25 Adc, I
B
= 200 mAdc)
(I
C
= 50 Adc, I
B
= 300 mAdc)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
h
FE
1k
400
18 k
2.5
3.5
3.0
4.5
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
V
(BR)CEO
60
90
120
2
2
2
10
10
5
2
Vdc
Symbol
Min
Max
Unit
I
CER
mAdc
I
EBO
I
CEO
mAdc
mAdc
V
CE(sat)
Vdc
V
BE(sat)
Vdc
http://onsemi.com
2
MJ11028, MJ11030, MJ11032 (NPN)
ORDERING INFORMATION
Device
MJ11028
MJ11028G
MJ11029
MJ11029G
MJ11030
MJ11030G
MJ11032
MJ11032G
MJ11033
MJ11033G
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
100 Units / Tray
Shipping
100
IC, COLLECTOR CURRENT (AMP)
50
20
10
5
2
1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
0.5
0.2
0.1
0.2
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
200
0.5
1
2
5
10 20
50 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
100 k
50 k
hFE, DC CURRENT GAIN
20 k
10 k
5k
2k
1k
500
200
100
1
2
5
10
20
80
ms
(PULSED)
50
100
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
V
CE
= 5 V
T
J
= 25°C
5
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
4
3
T
J
= 25°C
I
C
/I
B
= 100
V
BE(sat)
2
1
V
CE(sat)
1
2
3
5
10
20
I
C
, COLLECTOR CURRENT (AMP)
80
ms
(PULSED)
50
100
0
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
Figure 4. “On” Voltage
http://onsemi.com
3
MJ11028, MJ11030, MJ11032 (NPN)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
A
N
C
E
D
2 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
−T−
K
M
SEATING
PLANE
0.30 (0.012)
T Q
M
Y
M
V
2
U
L
G
−Y−
B
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
H
1
−Q−
0.25 (0.010)
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
T Y
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MJ11028/D
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