Second Breakdown Collector Current with Base Forward−Biased
(V
CE
= 50 Vdc, t = 0.5 s (non−repetitive)
Emitter Cutoff Current (V
EB
= 7.0 Vdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 200 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0)
Characteristic
100
40
80
20
60
0
MJ15020
−
NPN
0
25
THERMAL DERATING
50
Figure 1. Power Derating
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125
100
150
75
T
C
, CASE TEMPERATURE (°C)
MJ15020, MJ15021
MJ15020, MJ15021
SECOND BREAKDOWN
DERATING
2
MJ15021
−
PNP
175
C
ob
h
FE
I
S/b
f
T
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(on)
I
CEO
I
EBO
200
Min
250
3.0
20
30
10
−
−
−
−
−
Max
500
500
500
2.0
1.0
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Adc
Vdc
−
pF
MJ15020
−
NPN
MJ15021
−
PNP
TYPICAL DYNAMIC CHARACTERISTICS
200
100
70
50
30
20
PNP
10
7.0
5.0
3.0
2.0
0.1
T
J
= 25°C
V
CE
= 4.0 Vdc
hFE, DC CURRENT GAIN
NPN
0.2 0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
T
C
= 25°C
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
MJ15020/21
0.01
5.0 7.0 10
20 30
200 300
50 70 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
500
Figure 3. Maximum Rated Forward Biased
Safe Operating Area
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3
MJ15020
−
NPN
MJ15021
−
PNP
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
D
2 PL
−T−
K
M
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
−−−
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−−
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−−
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−−
21.08
3.84
4.19
30.15 BSC
3.33
4.77
0.13 (0.005)
U
2
T Q
M
Y
M
V
H
L
G
−Y−
B
1
−Q−
0.13 (0.005)
M
T Y
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor
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