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MJD200 (NPN)
MJD210 (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
Designed for low voltage, low−power, high−gain audio
amplifier applications.
Features
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•
Collector−Emitter Sustaining Voltage −
•
•
•
•
•
•
•
•
V
CEO(sus)
= 25 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain − h
FE
= 70 (Min) @ I
C
= 500 mAdc
= 45 (Min) @ I
C
= 2 Adc
= 10 (Min) @ I
C
= 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 500 mAdc
= 0.75 Vdc (Max) @ I
C
= 2.0 Adc
High Current−Gain − Bandwidth Product −
f
T
= 65 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakage −
I
CBO
= 100 nAdc @ Rated V
CB
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
Pb−Free Packages are Available
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
4
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
J2x0G
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
− Continuous
− Peak
Symbol
V
CB
V
CEO
V
EB
I
C
I
B
P
D
P
D
1.4
0.011
T
J
, T
stg
−65 to +150
W
W/°C
°C
Max
40
25
8.0
5.0
10
1.0
12.5
0.1
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
Y
WW
G
=
=
x
=
Year
Work Week
= 1 or 0
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
©
Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 8
Publication Order Number:
MJD200/D
MJD200 (NPN) MJD210 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R
qJC
R
qJA
Max
10
89.3
Unit
°C/W
°C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î Î
Î Î Î Î Î
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ Î Î Î
ÎÎÎÎÎÎÎ Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ
Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
Î Î Î
ÎÎÎ Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ Î Î
ÎÎ Î Î Î
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3), (I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
(V
CB
= 40 Vdc, I
E
= 0, T
J
= 125°C)
Emitter Cutoff Current (V
BE
= 8 Vdc, I
C
= 0)
V
CEO(sus)
V
CBO
25
−
−
−
−
Vdc
100
100
100
nAdc
mAdc
nAdc
V
EBO
ON CHARACTERISTICS
DC Current Gain (Note 3),
(I
C
= 500 mAdc, V
CE
= 1 Vdc)
(I
C
= 2 Adc, V
CE
= 1 Vdc)
(I
C
= 5 Adc, V
CE
= 2 Vdc)
h
FE
−
70
45
10
−
−
−
−
−
−
180
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 2 Adc, I
B
= 200 mAdc)
(I
C
= 5 Adc, I
B
= 1 Adc)
V
CE(sat)
Vdc
0.3
0.75
1.8
2.5
1.6
Base−Emitter Saturation Voltage (Note 3), (I
C
= 5 Adc, I
B
= 1 Adc)
Base−Emitter On Voltage (Note 3), (I
C
= 2 Adc, V
CE
= 1 Vdc)
V
BE(sat)
V
BE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
f
T
65
−
−
−
MHz
pF
MJD200
MJD210
C
ob
80
120
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
[
2%.
4. f
T
=
⎪h
fe
⎪•
f
test
.
ORDERING INFORMATION
Device
MJD200
MJD200G
MJD200RL
MJD200RLG
MJD200T4
MJD200T4G
MJD210
MJD210G
MJD210RL
MJD210RLG
MJD210T4
MJD210T4G
Package Type
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
2500 / Tape & Reel
1800 / Tape & Reel
75 Units / Rail
2500 / Tape & Reel
1800 / Tape & Reel
75 Units / Rail
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MJD200 (NPN) MJD210 (PNP)
T
A
2.5
PD, POWER DISSIPATION (WATTS)
T
C
25
25
ms
+11 V
1.5
15
T
A
(SURFACE MOUNT)
T
C
0.5
5
0
−9 V
1
10
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
−4 V
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
25
50
75
100
125
150
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
FOR PNP TEST CIRCUIT,
1N5825 USED ABOVE I
B
≈
100 mA
REVERSE ALL POLARITIES
MSD6100 USED BELOW I
B
≈
100 mA
D
1
R
B
R
C
SCOPE
V
CC
+30 V
2
20
0
0
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
1K
500
300
200
100
t, TIME (ns)
50
30
20
10
5
3
2
t, TIME (ns)
t
d
10K
5K
3K
2K
1K
500
300
200
100
50
30
20
5
10
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
r
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
MJD200
MJD210
MJD200
MJD210
t
f
3
5
10
1
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2 3
I
C
, COLLECTOR CURRENT (A)
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
1
2
I
C
, COLLECTOR CURRENT (A)
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
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3
MJD200 (NPN) MJD210 (PNP)
NPN
MJD200
400
T
J
= 150°C
25°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
200
−55
°C
100
80
60
40
V
CE
= 1 V
V
CE
= 2 V
0.2 0.3
0.5 0.7 1
2
I
C
, COLLECTOR CURRENT (A)
3
5
200
400
T
J
= 150°C
25°C
100
80
60
40
V
CE
= 1 V
V
CE
= 2 V
0.2 0.3
0.5 0.7 1
2
I
C
, COLLECTOR CURRENT (A)
3
5
−55
°C
PNP
MJD210
20
0.05 0.07 0.1
20
0.05 0.07 0.1
Figure 5. DC Current Gain
2
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2
T
J
= 25°C
1.6
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
I
C
, COLLECTOR CURRENT (A)
2
3
5
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
I
C
, COLLECTOR CURRENT (A)
2
3
5
0.8
0.8
Figure 6. “On” Voltage
+2.5
θ
V, TEMPERATURE COEFFICIENTS (mV/C)
°
+2
+1.5
+1
+0.5
0
−0.5
−1
−1.5
−2
−2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
q
VB
for V
BE
−55
°C
to 25°C
25°C to 150°C
−55
°C
to 25°C
2
3
5
q
VC
for V
CE(sat)
25°C to 150°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
θ
V, TEMPERATURE COEFFICIENTS (mV/C)
°
+2.5
+2
+1.5
+1
+0.5
0
−0.5
−1
−1.5
−2
−2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5
q
VB
for V
BE
25°C to 150°C
−55
°C
to 25°C
*q
VC
for V
CE(sat)
−55
°C
to 25°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
25°C to 150°C
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 7. Temperature Coefficients
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4
