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MJE371G

Bipolar Transistors - BJT 4A 40V 40W PNP

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
TO-225AA
包装说明
ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN
针数
3
制造商包装代码
77-09
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
最大集电极电流 (IC)
4 A
集电极-发射极最大电压
40 V
配置
SINGLE
最小直流电流增益 (hFE)
40
JEDEC-95代码
TO-225AA
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
40 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
MJE371G
Plastic Medium-Power
PNP Silicon Transistor
This device is designed for use in general−purpose amplifier and
switching circuits. Recommended for use in 5 to 20 Watt audio
amplifiers utilizing complementary symmetry circuitry.
http://onsemi.com
Features
High DC Current Gain
MJE371 is Complementary to NPN MJE521
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
40
320
T
J
, T
stg
–65 to +150
W
mW/_C
_C
Value
40
40
4.0
4.0
8.0
2.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
4 AMPERES
POWER TRANSISTOR
PNP SILICON
40 VOLTS, 40 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
CASE 77−09
STYLE 1
1 2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.12
Unit
_C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0) (Note 1)
Collector−Base Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
h
FE
40
Device
MJE371G
V
CEO(sus)
40
I
CBO
I
EBO
100
100
mAdc
mAdc
Vdc
Symbol
Min
Max
Unit
MARKING DIAGRAM
YWW
JE371G
Y
WW
JE371
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
TO−225
(Pb−Free)
Shipping
500 Units / Box
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
1. Pulse Test: Pulse Width
300
ms,
Duty Cycle
2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 9
Publication Order Number:
MJE371/D
MJE371G
10
IC, COLLECTOR CURRENT (AMP)
5.0
3.0
2.0
1.0
0.5
T
J
= 150°C
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ T
C
= 25°C
1.0 ms
5.0 ms
dc
100
ms
0.3
0.2
0.1
2.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
4.0
6.0 8.0 10
20
40
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
60
Figure 1. Active−Region Safe Operating Area
hFE, DC CURRENT GAIN, NORMALIZED
10
7.0
5.0
3.0
2.0
2.0
150°C
T
J
= 25°C
V
CE
= 1.0 Vdc
VOLTAGE (VOLTS)
- 55°C
1.6
T
J
= 25°C
1.2
1.0
0.7
0.5
0.3
0.2
0.1
0.01
0.8
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
0
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 2. DC Current Gain
Figure 3. “On” Voltage
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
q
JC
(t) = r(t)
q
JC
q
JC
= 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.05
0.02
0.01
SINGLE PULSE
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
50
100
200
500
1000
Figure 4. Thermal Response
http://onsemi.com
2
MJE371G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
3
MJE371/D
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