UNISONIC TECHNOLOGIES CO., LTD
MMBT1815
AUDIO FREQUENCY
AMPLIFIER HIGH
FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BV
CEO
=-50V
*Collector current up to 150mA
*High h
FE
linearity
*Complement to MMBT1015
NPN EPITAXIAL SILICON TRANSISTOR
*Pb-free plating product number: MMBT1815L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT1815-x-AC3-6-R
MMBT1815L-x-AC3-6-R
MMBT1815-x-AE3-6-R
MMBT1815L-x-AE3-6-R
MMBT1815-x-AN3-6-R
MMBT1815L-x-AN3-6-R
Package
SOT-113
SOT-23
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (Ta=25°C)
Collector Current
Base Current
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( Ta=25°C , unless otherwise specified )
SYMBOL
V
CBO
V
CEO
V
EBO
SOT-23/SOT-113
SOT-523
P
C
I
C
I
B
RATINGS
60
50
5
250
200
150
50
UNIT
V
V
V
mW
mW
mA
mA
Junction Temperature
T
J
125
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
NF
TEST CONDITIONS
Ic = 100mA, I
B
= 10mA
Ic = 100mA, I
B
= 10mA
V
CB
= 60V, I
E
= 0
V
EB
= 5V, c = 0
V
CE
= 6V, Ic = 2mA
V
CE
= 6V, Ic = 150mA
V
CE
= 10V,Ic = 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Ic = -0.1mA, V
CE
= 6V
R
G
= 10kΩ, f = 100Hz
MIN
TYP
0.1
MAX UNIT
0.25
V
1.0
V
100
nA
100
nA
700
MHz
pF
dB
120
25
80
2.0
1.0
3.0
1.0
CLASSIFICATION OF h
FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT1815
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Current Gain-bandwidth
product,f
T
(MHz)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance, Cob (pF)
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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