MMBT2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SPICE MODEL: MMBT2222A
Features
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT2907A)
Ideal for Medium Power Amplification and
Switching
Also Available in Lead Free Version
SOT-23
Dim
A
C
B
B
TOP VIEW
E
E
D
G
H
K
J
L
M
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
B
C
D
E
G
H
J
K
L
M
a
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K1P
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
C
All Dimensions in mm
B
E
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBT2222A
75
40
6.0
600
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30041 Rev. 7 - 2
1 of 4
www.diodes.com
MMBT2222A
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
BL
Min
75
40
6.0
¾
¾
¾
¾
35
50
75
100
40
50
35
¾
0.6
¾
¾
—
300
¾
Max
¾
¾
¾
10
10
10
20
¾
¾
¾
300
¾
¾
¾
0.3
1.0
1.2
2.0
8
25
¾
4.0
Unit
V
V
V
nA
mA
nA
nA
nA
Test Condition
I
C
= 10mA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150°C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
I
C
= 100mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10V, I
C
= 100mA,
R
S
= 1.0kW, f = 1.0kHz
DC Current Gain
h
FE
¾
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
V
V
C
obo
C
ibo
f
T
NF
pF
pF
MHz
dB
t
d
t
r
t
s
t
f
(Note 3)
¾
¾
¾
¾
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Ordering Information
Device
MMBT2222A-7
Note:
Packaging
SOT-23
Shipping
3000/Tape & Reel
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: MMBT2222A-7-F.
Marking Information
K1P
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30041 Rev. 7 - 2
2 of 4
www.diodes.com
MMBT2222A
1000
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
h
FE
, DC CURRENT GAIN
T
A
= 125°C
100
T
A
= -25°C
T
A
= +25°C
10
V
CE
= 1.0V
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs
Ambient Temperature
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
2.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
30
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 300mA
Cibo
CAPACITANCE (pF)
10
5.0
Cobo
1.0
0.1
1.0
10
50
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
0.01
0.1
1
10
100
I
B
, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
0.5
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
1.0
I
C
I
B
= 10
0.4
T
A
= 25°C
0.3
T
A
= 150°C
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
CE
= 5V
T
A
= -50°C
T
A
= 25°C
T
A
= 150°C
0.1
T
A
= -50°C
0
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
DS30041 Rev. 7 - 2
3 of 4
www.diodes.com
MMBT2222A
1000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
1
DS30041 Rev. 7 - 2
4 of 4
www.diodes.com
MMBT2222A
