MMBT2222A
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
•
•
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•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type: MMBT2907A
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
•
•
•
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Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Leads; Solderable per MIL-STD-
202, Method 208
Weight: 0.008 grams (approximate)
C
SOT23
E
B
C
B
Top View
Pin-Out
E
Top View
Device Symbol
Ordering Information
(Notes 4 & 5)
Product
MMBT2222A-7-F
MMBT2222A-13-F
MMBT2222AQ-7-F
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Marking
K1P
K1P
K1P
Reel Size (inches)
7
13
7
Tape Width (mm)
8
8
8
Quantity per Reel
3,000
10,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K1P
K1P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
YM
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
MMBT2222A
Document number: DS30041 Rev. 14 - 2
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January 2014
© Diodes Incorporated
MMBT2222A
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
75
40
6.0
600
800
200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222A
Document number: DS30041 Rev. 14 - 2
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January 2014
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MMBT2222A
Thermal Characteristics and Derating Information
0.4
400
Max Power Dissipation (W)
0.3
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
MMBT2222A
Document number: DS30041 Rev. 14 - 2
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January 2014
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MMBT2222A
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 10)
35
50
75
100
40
50
35
⎯
0.6
⎯
⎯
—
300
⎯
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8
25
⎯
4.0
I
C
= 100µA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10V, I
C
= 100µA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 30V, I
C
= 150mA,
V
BE(OFF)
= - 0.5V, I
B1
= 15mA
V
CC
= 3.0V, I
C
= 150mA, I
B1
= 15mA,
V
BE(OFF)
= 0.5V
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
V
CC
= 30V, I
C
= 150mA, I
B1
= I
B2
= 15mA
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
CEV
I
EBO
I
BL
75
40
6.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
10
10
10
20
V
V
V
nA
µA
nA
nA
nA
nA
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +150°C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
CE
= 60V, V
BE
= ±0.25V
V
EB
= 5.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(sat)
V
BE(sat)
V
V
C
obo
C
ibo
f
T
NF
pF
pF
MHz
dB
t
d
t
r
t
s
t
f
⎯
⎯
⎯
⎯
10
25
225
60
ns
ns
ns
ns
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
MMBT2222A
Document number: DS30041 Rev. 14 - 2
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MMBT2222A
1,000
0.5
I
C
I
B
= 10
V
CE(SAT)
, COLLECTOR -EMITTER
SATURATION VOLTAGE (V)
T
A
= 125°C
0.4
T
A
= 25°C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= 25°C
0.3
T
A
= 150°C
0.2
10
0.1
T
A
= -50°C
V
CE
= 1.0V
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
0.1
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Figure 3 Base-Emitter Turn-On Voltage
vs. Collector Current
V
CE
= 5V
1
0
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
f = 1MHz
35
V
CE
= 5V
T
A
= -50°C
30
25
T
A
= 25°C
CAPACITANCE (pF)
20
15
10
5
0
C
obo
C
ibo
T
A
= 150°C
100
0
8 10 12 14 16 18 20
6
V
R
, REVERSE VOLTS (V)
Figure 4 Typical Capacitance Characteristics
2
4
1,000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.1
10
100
1
I
B
, BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
0.01
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 300mA
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product
vs. Collector Current
100
MMBT2222A
Document number: DS30041 Rev. 14 - 2
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January 2014
© Diodes Incorporated
