D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
MMBT3904T — NPN Epitaxial Silicon Transistor
February 2008
MMBT3904T
NPN Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• Suitable for general switching & amplification
• Well suited for portable application
•
As complementary type, PNP MMBT3906T is recommended
B
Marking : A04
C
E
SOT-523F
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Value
60
40
6
200
150
-55 ~ 150
Unit
V
V
V
mA
°C
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
P
C
R
θJA
* Minimum land pad.
Parameter
Collector Power Dissipation, by R
θJA
Thermal Resistance, Junction to Ambient
Max
250
500
Unit
mW
°C/W
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3V
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 20V, I
C
= 10mA, f = 100MHz
V
CB
= 5V, I
E
= 0, f = 1MHz
V
EB
= 0.5V, I
C
= 0, f = 1MHz
V
CC
= 3V, I
C
= 10mA
I
B1
=- I
B2
= 1mA
Min.
60
40
6
Max.
Unit
V
V
V
50
40
70
100
60
30
nA
300
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
0.2
0.3
0.65
300
6
15
35
35
200
50
0.85
0.95
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
1
www.fairchildsemi.com
MMBT3904T — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
T
J
=125 C
T
J
=75 C
T
J
=25 C
o
o
o
Figure 2. Collector-Emitter Saturation Voltage
1000
Vce=1V
Ic=10*Ib
Collector-Emitter Voltage,[mV]
Current Gain
100
T
J
=-25 C
o
T
J
=125 C
T
J
=75 C
o
o
100
o
T
J
=25 C
T
J
=-25 C
o
10
1
10
100
1000
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Ic=10*Ib
T
J
=25 C
1000
o
Figure 4. Collector- Base Leakage Current
T
J
=-25 C
o
Base-Collector Leakage Current,[nA]
1000
Base- Emitter Voltage,[mV]
T
J
=125 C
o
T
J
=75 C
T
J
=125 C
o
o
100
T
J
=75 C
T
J
=25 C
o
o
10
T
J
=-25 C
1
10
o
100
10
100
20
30
40
50
60
Collector Current, [mA]
Base-Collector Revere Voltage, [V]
Figure 5. Collector- Base Capacitance
Base- Collector Juntion Capacitance, C
ob
[pF]
7
Figure 6. Power Derating
300
f=1mhz
7
250
Power Dissipation, [mW]
6
200
6
150
5
100
5
50
4
0
5
10
0
0
25
50
75
100
o
125
150
Base- Collector Reverse Voltage, V
cb
[V]
Ambient Temperature, T
a
[ C]
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
2
www.fairchildsemi.com
MMBT3904T — NPN Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
•
•
•
•
Case : SOT-523F
Case Material(Molded Plastic): KTMC1060SC
UL Flammability classification rating : “V0”
Moisture Sensitivity level per JESD22-A1113B : MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating : Pure Tin(Matte)
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
3
www.fairchildsemi.com
MMBT3904T NPN Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx
®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
®
FastvCore™
FPS™
FRFET
®
Global Power Resource
SM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC
®
OPTOPLANAR
®
®
PDP-SPM™
Power220
®
Power247
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
4
www.fairchildsemi.com
