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MMBT5962D87Z

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SO-3

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
厂商名称
Fairchild
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW NOISE
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
600
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
参数对比
与MMBT5962D87Z相近的元器件有:2N5962D74Z、2N5962D26Z、2N5962D75Z、2N5962J18Z、2N5962D27Z、2N5962J05Z、MMBT5962L99Z、MMBT5962S62Z。描述及对比如下:
型号 MMBT5962D87Z 2N5962D74Z 2N5962D26Z 2N5962D75Z 2N5962J18Z 2N5962D27Z 2N5962J05Z MMBT5962L99Z MMBT5962S62Z
描述 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SO-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SO-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SO-3
包装说明 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown compli unknow unknow unknow unknow unknow unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 600 600 600 600 600 600 600 600 600
JESD-30 代码 R-PDSO-G3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR ROUND ROUND ROUND ROUND ROUND ROUND RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES NO NO NO NO NO NO YES YES
端子形式 GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
端子位置 DUAL BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
针数 3 - - - 3 - 3 3 3
JEDEC-95代码 - TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 - -
Base Number Matches - 1 1 1 1 1 1 - -
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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