MMBTA05 / MMBTA06
NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Complementary PNP Type: MMBTA55 & MMBTA56
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
C
E
B
C
B
E
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information
(Notes 4 & 5)
Product
MMBTA05-7-F
MMBTA05Q-13-F
MMBTA06-7-F
MMBTA06Q-7-F
Notes:
Compliance
AEC-Q101
Automotive
AEC-Q101
Automotive
Marking
K1G / K1H
K1G / K1H
K1G
K1G
Reel size (inches)
7
13
7
7
Tape width (mm)
8
8
8
8
Quantity per reel
3,000
10,000
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Kxx = Product Type Marking Code (See Ordering Information)
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
MMBTA05 / MMBTA06
Document number: DS30037 Rev. 14 - 2
1 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBTA05 / MMBTA06
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
MMBTA05
60
60
4.0
500
1
MMBTA06
80
80
Unit
V
V
V
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
C/W
C/W
C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBTA05 / MMBTA06
Document number: DS30037 Rev. 14 - 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBTA05 / MMBTA06
Thermal Characteristics and Derating Information
0.4
400
Max Power Dissipation (W)
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
MMBTA05 / MMBTA06
Document number: DS30037 Rev. 14 - 2
3 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBTA05 / MMBTA06
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Note:
Symbol
MMBTA05
MMBTA06
MMBTA05
MMBTA06
MMBTA05
MMBTA06
MMBTA05
MMBTA06
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
Min
60
80
60
80
4.0
Max
100
100
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10.0mA, I
B
= 0
I
E
= 100 µA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1.0V
V
CE
= 2.0V, I
C
= 10mA, f = 100MHz
h
FE
V
CE(sat)
V
BE(sat)
f
T
100
100
0.25
1.2
V
V
MHz
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
MMBTA05 / MMBTA06
Document number: DS30037 Rev. 14 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBTA05 / MMBTA06
10,000
V
CE
= 5V
0.50
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
T
A
= -50°C
T
A
= 150°C
T
A
= 25°C
I
C
I
B
= 10
h
FE
, DC CURRENT GAIN
1,000
T
A
= 150°C
100
T
A
= -50°C
T
A
= 25°C
10
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
1
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
0.9
0.8
T
A
= -50°C
V
CE
= 5V
1
0
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
T
A
= 150°C
T
A
= 25°C
100
10
10
I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical Gain Bandwidth Product vs. Collector Current
1
2.0
1
10
I
CBO
, COLLECTOR-BASE CURRENT (nA)
V
CB
= 80V
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1
0.1
10
100
I
B
,
BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
0.01
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 30mA
1
0.1
0.01
25
50
75
100
T
A
, AMBIENT TEMPERATURE (ºC)
Figure 5 Typical Collector-Cutoff Current
vs. Ambient Temperature
125
MMBTA05 / MMBTA06
Document number: DS30037 Rev. 14 - 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
综合技术交流
