MCC
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•
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TM
Micro Commercial Components
Features
omponents
20736 Marilla
Street Chatsworth
!"#
$
% !"#
MMBTA05
THRU
MMBTA06
NPN Small Signal
General Purpose
Amplifier Transistors
SOT-23
A
D
Halogen
free available upon request by adding suffix "-HF"
Epitaxial Planar Die Construction
Complementary PNP Types Available (MMBTA55/MMBTA56)
Ideal for Medium Power Amplification and Switching.
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V
CEO
Marking:
MMBTA05:1H/K1H
MMBTA06:1GM/K1G
Rating
Unit
V
CBO
Electrical Characteristics @ 25
Symbol
V
(BR)CEO
V
EBO
I
C
P
D
R
θJA
T
J
T
STG
Rating
Collector-Emitter Voltage
MMBTA05
MMBTA06
Collector-Base Voltage
MMBTA05
MMBTA06
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation*
Thermal Resistance, Junction to Ambient
Operating Junction Temperature
Storage Temperature
C
60
80
V
C
B
60
80
4.0
500
300
417
-55 to +150
-55 to +150
V
V
mA
mW
o
C/W
G
F
E
B
E
H
J
Unless Otherwise Specified
Min
Max
Units
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
V
(BR)CBO
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
MMBTA05
MMBTA06
Collector-Base Breakdown Voltage
(I
C
=0.1mAdc, I
E
=0)
MMBTA05
MMBTA06
Emitter-Base Breakdown Voltage
(I
E
=100µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0) MMBTA05
(V
CB
=80Vdc, I
E
=0) MMBTA06
Collector
Cutoff Current
(V
CE
=60Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3Vdc, I
C
=0)
DC Current Gain
(V
CE
=1.0Vdc, I
C
=10mAdc)
(V
CE
=1.0Vdc, I
C
=100mAdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter
Saturation
Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Transition frequency
(I
C
=10mAdc, V
CE
=2.0Vdc, f=100MHz)
60
80
---
---
60
80
4.0
---
---
---
---
100
100
---
---
100
---
---
---
0.1
0.1
1.0
0.1
400
---
0.25
1.2
---
Vdc
V
(BR)EBO
I
CBO
Vdc
µAdc
µAdc
µAdc
µAdc
.035
.900
.079
2.000
Suggested Solder
Pad Layout
.031
.800
I
CEO
I
EBO
h
FE
inches
mm
V
CE(sat)
V
BE(sat)
f
T
Vdc
Vdc
MHz
.037
.950
.037
.950
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MCC
MMBTA05
Typical Characteristics
Static Characteristic
35
1000
TM
Micro Commercial Components
h
FE
——
I
C
30
(mA)
COMMON
EMITTER
T
a
=25℃
200uA
h
FE
180uA
160uA
T
a
=100
℃
25
I
C
COLLECTOR CURRENT
20
140uA
120uA
DC CURRENT GAIN
100
15
T
a
=25℃
100uA
10
80uA
60uA
5
40uA
I
B
=20uA
COMMON EMITTER
V
CE
= 1V
4
10
0.1
1
10
100
500
0
0
1
2
3
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
BEsat
——
β=10
I
C
1000
V
CEsat
β=10
——
I
C
800
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25℃
600
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
100
400
T
a
=100
℃
T
a
=100
℃
T
a
=25℃
200
=1V
0
0.1
1
10
100
500
10
0.1
1
10
100
500
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
500
——
V
BE
500
f
T
——
I
C
(mA)
100
I
C
TRANSITION FREQUENCY
COLLECTOR CURRENT
f
T
100
10
1
(MHz)
COMMON EMITTER
V
CE
=1V
COMMON EMITTER
V
CE
=2V
T
a
=25℃
0.1
0
200
400
600
800
1000
10
2
10
20
30
40
50
60
70
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
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MMBTA05
Typical Characteristics
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
(pF)
C
ib
300
MCC
400
TM
Micro Commercial Components
P
C
——
T
a
1000
100
CAPACITANCE
C
200
10
C
ob
100
1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(℃)
Revision:
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MCC
MMBTA06
Typical characteristics
Static Characteristic
500uA
450uA
400uA
60
TM
Micro Commercial Components
90
80
500
h
FE
—— I
C
V
CE
=1V
V
CE
=1V
o
T
a
=100
o
C
C
T
a
=100
COMMON
EMITTER
T =25℃
a
(mA)
70
I
C
350uA
COLLECTOR CURRENT
50
40
30
20
DC CURRENT GAIN
h
FE
300uA
250uA
200uA
150uA
100uA
o
T
a
=25 C
a
o
100
10
I
B
=50uA
0
0
1
2
3
4
5
6
7
8
9
10
20
1
10
100
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1
V
CEsat
—— I
C
β=10
10
V
BEsat
——
I
C
β=10
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.1
T
=100
o
C
T
a
a
=100℃
T
a
=25
℃
=25℃
1
T
a
=25 C
o
T
a
=100
o
C
T
a
=100℃
0.01
1
10
100
500
0.1
1
10
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
V
BE
——
I
C
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
I
C
(mA)
COLLECTOR CURRENT
C
10
(pF)
T
a
=25 C
o
100
1
CAPACITANCE
C
ib
10
C
ob
0.1
0.0
V
CE
=1V
0.3
0.6
0.9
1.2
1
0.1
1
10
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
Revision:
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MCC
MMBTA06
Typical characteristics
f
T
——
I
C
P
c
——
T
a
TM
Micro Commercial Components
300
0.4
(MHz)
COLLECTOR POWER DISSIPATION
P
c
(W)
V
CE
=2V
T
a
=25 C
o
0.3
f
T
100
TRANSITION FREQUENCY
0.2
0.1
10
3
10
70
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(℃)
Revision:
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