MMBTA13 NPN Darlington Transistor
January 2005
MMBTA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
3
2
1
SOT-23
Mark: 1M
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Value
30
30
10
Units
V
V
V
A
°C
- Continuous
1.2
-55 to +150
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
I
CBO
I
EBO
h
FE
V
CE (sat)
V
BE (on)
f
T
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 100µA, I
B
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 10V, I
C
= 0
V
CE
= 5.0V, I
C
=10mA
V
CE
= 5.0, I
C
= 100mA
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA,V
CE
= 5.0V
I
C
= 10mA, V
CE
= 10V, f = 100MHz
125
5,000
10,000
1.5
2.0
V
V
30
100
100
V
nA
nA
Parameter
Test Condition
Min.
Max.
Units
On Characteristics *
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
Current Gain Bandwidth Product
pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBTA13 Rev. B
MMBTA13 NPN Darlington Transistor
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
Units
mW
mW/°C
°C/W
°C/W
357
* Device mounted on FR-4PCB 1.6”
×
1.6”
×
0.06”.
2
MMBTA13 Rev. B
www.fairchildsemi.com
MMBTA13 NPN Darlington Transistor
Mechanical Dimensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
3
MMBTA13 Rev. B
www.fairchildsemi.com
MMBTA13 NPN Darlington Transistor
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
4
MMBTA13 Rev. B
www.fairchildsemi.com
