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MMDT5551

General Purpose Dual NPN Bipolar Transistor; Polarity: NPN×2; V(BR)CEO Min (V): 160V; IC (A): 0.2A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.15V; IC (mA)1: 10mA; IB (mA): 1mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.2W; Package: SOT-363; package_code: SOT-363; mfr_package_code: SOT-363

器件类别:分立半导体    晶体管   

厂商名称:Galaxy Microelectronics

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器件参数
参数名称
属性值
零件包装代码
SOT-363
包装说明
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.6 A
集电极-发射极最大电压
160 V
配置
SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)
30
JESD-30 代码
R-PDSO-G6
元件数量
2
端子数量
6
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
Production specification
Dual NPN Small Signal Surface Mount Transistor
FEATURES
Epitaxial planar die construction.
Complementary PNP type available
MMDT5401.
Ultra-small surface mount package.
MMDT5551
Pb
Lead-free
APPLICATIONS
Dual NPN small signal surface mount transistor.
SOT-363
ORDERING INFORMATION
Type No.
MMDT5551
Marking
K4N
Package Code
SOT-363
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
180
160
6
600
200
625
-55 to +150
Unit
V
V
V
mA
mW
℃/W
G010
Rev.A
www.gmesemi.com
1
Production specification
Dual NPN Small Signal Surface Mount Transistor
MMDT5551
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=100μA I
E
=0
I
C
=1mA I
B
=0
I
E
=10μA I
C
=0
V
CB
=120V I
E
=0
V
EB
=4V I
C
=0
V
CE
=5V I
C
=1.0mA
DC current gain
h
FE
V
CE
=5V I
C
=10mA
V
CE
=5V I
C
=50mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=10mA I
B
=1mA
I
C
=50mA I
B
=5mA
I
C
=10mA I
B
=1mA
I
C
=50mA I
B
=5mA
V
CE
=10V I
C
=10mA f=100MHz
V
CB
=10V,f=1.0MHz,I
E
=0
V
CE
=5V,f=1.0kHz,I
C
=200μA
R
g
=1.0kΩ
MIN
180
160
6
-
-
80
80
30
-
-
-
100
-
-
MAX
-
-
-
50
50
-
250
-
0.15
0.2
1
1
300
6
8.0
V
-
UNIT
V
V
V
nA
nA
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
V
BE(sat)
f
T
C
obo
NF
V
MHz
pF
dB
G010
Rev.A
www.gmesemi.com
2
Production specification
Dual NPN Small Signal Surface Mount Transistor
MMDT5551
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
G010
Rev.A
www.gmesemi.com
3
Production specification
Dual NPN Small Signal Surface Mount Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
MMDT5551
SOT-363
SOT-363
Dim
E
Min
2.00
1.15
Max
2.20
1.35
A
B
C
D
E
K
B
0.95 Typical
0.25 Typical
0.25
0.60
0.02
2.2
0.40
0.70
0.10
2.4
D
G
H
C
J
G
H
J
K
0.10 Typical
All Dimensions in mm
SOLDERING FOOTPRINT
0.50
0.40
1.90
PACKAGE
Device
MMDT5551
INFORMATION
Package
SOT-363
Shipping
3000/Tape&Reel
0.65
0.65
Unit : mm
G010
Rev.A
www.gmesemi.com
4
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