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MMSD914

DIODE GEN PURP 100V 200MA SOD123

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
R-PDSO-G2
制造商包装代码
425-04
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
其他特性
FAST SWITCHES
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-30 代码
R-PDSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
1 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.4 W
认证状态
Not Qualified
最大重复峰值反向电压
100 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
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Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MMSD914 Small Signal Diode
February 2005
MMSD914
Small Signal Diode
SOD123
COLOR BAND DENOTES CATHODE
TOP MARKING:
5D
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
2.0
-55 to +150
150
Unit
V
mA
A
A
°C
°C
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Parameter
Value
400
312
Unit
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
I
R
= 5.0µA
I
R
= 100µA
I
F
= 10mA
Conditions
Min.
75
100
Max.
Units
V
V
1.0
25
50
5.0
4.0
4.0
2.5
V
nA
µA
µA
pF
ns
V
V
R
= 20V
V
R
= 20V, T
A
= 150°C
V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= 10mA, V
R
= 6.0V, I
RR
= 1.0mA,
R
L
= 100Ω
I
F
= 50mA, Peak square wave pulse
width = 0.1µS, 5kHz - 100kHz rep rate
C
T
t
rr
V
F(peak)
Total Capacitance
Reverse Recovery Time
Peak Forward Recovery Voltage
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMSD914 Rev. C
M
MMSD914 Small Signal Diode
Typical Characteristics
4.0
400
Ta= 25
°
C
Reverse Recovery Time [nS]
3.5
300
3.0
Current [mA]
2.5
200
I
F
(AV
)
-A
V
ER
AG
2.0
ER
E
CT
100
IF IE
DC
UR
RE
1.5
0
NT
-m
A
150
1.0
10
20
30
40
50
60
0
50
100
Reverse Current [mA]
Ambient Temperature, T
A
[
°
C]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
500
Power Dissipation, P [mW ]
D
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average T em perature, I
O
[
°
C ]
Figure 9. Power Derating Curve
M
MMSD914 Small Signal Diode
Typical Characteristics
150
Ta= 25
°
C
300
Ta= 25
°
C
Reverse Voltage, V
R
[V]
Reverse Current, I
R
[nA]
1
2
3
5
10
20
30
50
100
140
250
200
130
150
120
100
50
110
0
Reverse Current, I
R
[uA]
10
20
30
50
70
100
Reverse Voltage, V
R
[V]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Ta= 25
°
C
450
700
Ta= 25
°
C
Forward Voltage, V
F
[mV]
Forward Voltage, V
F
[mV]
1
2
3
5
10
20
30
50
100
650
400
600
350
550
300
500
250
450
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I
F
[uA]
Forward Current, I
F
[mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.3
Ta= 25
°
C
Ta= 25
°
C
Forward Voltage, V
F
[V]
Total Capacitance [pF]
10
20
30
50
100
200
300
500
1.4
1.2
1.2
1.0
1.1
0.8
0.6
1.0
0
2
4
6
8
10
12
14
Forw ard C urrent, I
F
[m A ]
R everse V oltage [V ]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
Figure 6. Total Capacitance vs Reverse Voltage
MMSD914 Small Signal Diode
MMSD914 Small Signal Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
A
CEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
2
MMSD914 Rev. C
www.fairchildsemi.com
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