首页 > 器件类别 > 分立半导体 > 晶体管

MMSTA56

Transistor,

器件类别:分立半导体    晶体管   

厂商名称:Galaxy Semi-Conductor Co Ltd

下载文档
器件参数
参数名称
属性值
厂商名称
Galaxy Semi-Conductor Co Ltd
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
50 MHz
文档预览
BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(P
C
=200mW).
Epitaxial planar die construction.
Also available in lead free version.
Production specification
MMSTA55/MMSTA56
Pb
Lead-free
APPLICATIONS
General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No.
MMSTA55
MMSTA56
Marking
K2H
K2G
Package Code
SOT-323
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MMSTA55
MMSTA56
MMSTA55
MMSTA56
MMSTA55
MMSTA56
Value
-60
-80
-60
-80
-4
-500
200
-55~150
Units
V
V
V
mA
mW
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Document number: BL/SSSTF063
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
Production specification
MMSTA55/MMSTA56
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
Test conditions
I
C
=-100μA,I
E
=0 MMSTA55
MMSTA56
I
C
=-1mA,I
B
=0 MMSTA55
MMSTA56
I
E
=-100μA,I
C
=0
V
CB
=-60V,I
E
=0 MMSTA55
V
CB
=-80V,I
E
=0 MMSTA56
V
CE
=-50V,I
B
=0 MMSTA55
V
CE
=-60V,I
B
=0 MMSTA56
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-100mA
I
C
=-100mA, I
B
=-10mA
100
100
-0.25
V
MIN
-60
-80
-60
-80
-4
-0.1
-0.1
-0.1
-0.1
TYP MAX
UNIT
V
V
V
μA
Collector cut-off current
μA
DC current gain
Collector-emitter saturation
voltage
Base-emitter on voltage
h
FE
V
CE(sat)
V
BE(on)
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V,I
C
= -100mA,
f=100MHz
-1.2
V
Transition frequency
f
T
50
MHz
Document number: BL/SSSTF063
Rev.A
www.galaxycn.com
2
BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
Production specification
MMSTA55/MMSTA56
SOT-323
SOT-323
Dim
A
B
C
D
E
G
H
J
K
Min
1.8
1.15
0.15
0.25
1.2
0.02
2.1
Max
2.2
1.35
0.35
0.40
1.4
0.1
2.3
1.0Typical
0.1Typical
All Dimensions in mm
PACKAGE INFORMATION
Device
MMSTA55/MMSTA56
Package
SOT-323
Shipping
3000/Tape&Reel
Document number: BL/SSSTF063
Rev.A
www.galaxycn.com
3
查看更多>
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消