MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by MPS6521/D
COLLECTOR 3
2
BASE
NPN
*
MPS6521
1 EMITTER
PNP
MPS6523
COLLECTOR 3
2
BASE
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
1 EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
MPS6521
MPS6523
Collector – Base Voltage
MPS6521
MPS6523
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
VCBO
40
—
4.0
100
625
5.0
1.5
12
– 55 to +150
—
25
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
VCEO
25
—
—
25
Vdc
1
2
3
NPN
PNP
Unit
Vdc
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
MPS6521
MPS6523
V(BR)CEO
V(BR)EBO
ICBO
—
—
0.05
0.05
25
4.0
—
—
Vdc
Vdc
m
Adc
Preferred
devices are Motorola recommended choices for future use and best overall value.
(Replaces MPS6520/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
NPN MPS6521 PNP MPS6523
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
m
Adc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
(IC = 100
m
Adc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 5.0 mAdc)
hFE
MPS6521
MPS6521
MPS6523
MPS6523
VCE(sat)
150
300
150
300
—
—
600
—
600
0.5
Vdc
—
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 10
m
Adc, VCE = 5.0 Vdc, RS = 10 k
Ω,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
Cobo
NF
—
—
3.5
3.0
pF
dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN MPS6521 PNP MPS6523
NPN
MPS6521
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+10.9 V
10 k
275
10 < t1 < 500
µs
DUTY CYCLE = 2%
0
+ 3.0 V
t1
+10.9 V
10 k
275
CS < 4.0 pF*
– 9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
IC = 1.0 mA
en, NOISE VOLTAGE (nV)
300
µA
BANDWIDTH = 1.0 Hz
RS = 0
In, NOISE CURRENT (pA)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
2.0
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
30
µA
10
µA
IC = 1.0 mA
300
µA
100
µA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
10
7.0
5.0
10
µA
3.0
100
µA
30
µA
Figure 3. Noise Voltage
Figure 4. Noise Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
NPN MPS6521 PNP MPS6523
NPN
MPS6521
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700
1k
BANDWIDTH = 1.0 Hz
1M
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
500 700
1k
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as:
NF
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
200 300
500 700
1k
+
20 log10
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
IC, COLLECTOR CURRENT (µA)
Figure 7. Wideband
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN MPS6521 PNP MPS6523
NPN
MPS6521
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
h FE, DC CURRENT GAIN
200
25°C
– 55°C
100
80
60
40
0.004 0.006 0.01
VCE = 1.0 V
VCE = 10 V
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
0.8
IC = 1.0 mA
10 mA
50 mA
100 mA
100
TA = 25°C
PULSE WIDTH = 300
µs
80 DUTY CYCLE
≤
2.0%
IB = 500
µA
400
µA
300
µA
0.6
60
200
µA
40
100
µA
20
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
100
VBE(sat) @ IC/IB = 10
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
*APPLIES for IC/IB
≤
hFE/2
25°C to 125°C
0
*
q
VC for VCE(sat)
– 55°C to 25°C
– 0.8
25°C to 125°C
– 1.6
q
VB for VBE
– 2.4
0.1
0.2
– 55°C to 25°C
50
100
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
stm32/stm8
