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MPSA13, MPSA14
MPSA14 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
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COLLECTOR 3
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
30
30
10
500
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
BASE
2
EMITTER 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/mW
°C/mW
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
MPS
A1x
AYWW
G
G
x
= 3 or 4
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Preferred
devices are recommended choices for future use
and best overall value.
1
April, 2007 − Rev. 4
Publication Order Number:
MPSA13/D
MPSA13, MPSA14
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 100
mAdc,
I
B
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
Base −Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
2. f
T
= |h
fe
|
S
f
test
.
f
T
125
−
MHz
h
FE
MPSA13
MPSA14
MPSA13
MPSA14
V
CE(sat)
V
BE(on)
5,000
10,000
10,000
20,000
−
−
−
−
−
−
1.5
2.0
Vdc
Vdc
−
V
(BR)CES
I
CBO
I
EBO
30
−
−
−
100
100
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
ORDERING INFORMATION
Device
MPSA13
MPSA13G
MPSA13RLRA
MPSA13RLRAG
MPSA13RLRMG
MPSA13RLRPG
MPSA13ZL1G
MPSA14G
MPSA14RLRAG
MPSA14RLRPG
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MPSA13, MPSA14
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500
200
100
10
mA
50
100
mA
20
I
C
= 1.0 mA
10
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
2.0
BANDWIDTH = 1.0 Hz
i n, NOISE CURRENT (pA)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
100
mA
10
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
en, NOISE VOLTAGE (nV)
I
C
= 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
BANDWIDTH = 10 Hz TO 15.7 kHz
NF, NOISE FIGURE (dB)
I
C
= 10
mA
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
100
70
50
30
20
10
8.0
6.0
4.0
2.0
I
C
= 1.0 mA
100
mA
10
mA
100
mA
1.0 mA
10
1.0
2.0
5.0
10
20
50 100 200
R
S
, SOURCE RESISTANCE (kW)
500
1000
0
1.0
2.0
5.0
10
20
50 100 200
R
S
, SOURCE RESISTANCE (kW)
500
1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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3
MPSA13, MPSA14
SMALL−SIGNAL CHARACTERISTICS
20
T
J
= 25°C
|h fe |, SMALL−SIGNAL CURRENT GAIN
4.0
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25°C
C, CAPACITANCE (pF)
10
7.0
5.0
2.0
C
ibo
C
obo
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
V
R
, REVERSE VOLTAGE (VOLTS)
10
20
40
0.2
0.5
1.0
2.0
0.5 10 20
50
100 200
I
C
, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200 k
T
J
= 125°C
hFE, DC CURRENT GAIN
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.5
I
C
= 10 mA
50 mA
250 mA
500 mA
25°C
2.0
1.5
−55
°C
V
CE
= 5.0 V
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
I
B
, BASE CURRENT (mA)
100 200
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
R
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.6
T
J
= 25°C
1.4
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 1000
1.2
V
BE(on)
@ V
CE
= 5.0 V
1.0
−1.0
−2.0
−3.0
*APPLIES FOR I
C
/I
B
≤
h
FE
/3.0
*R
qVC
FOR V
CE(sat)
25°C TO 125°C
−55
°C
TO 25°C
25°C TO 125°C
−4.0
q
VB
FOR V
BE
−5.0
−6.0
5.0 7.0 10
−55
°C
TO 25°C
0.8
0.6
V
CE(sat)
@ I
C
/I
B
= 1000
5.0 7.0
10
20 30
50 70 100 200 300
I
C
, COLLECTOR CURRENT (mA)
500
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
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