MPSA05 MPSA06
MPSA55 MPSA56
NPN
PNP
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA05, MPSA55
series devices are complementary silicon transistors
designed for low power output and medium power
driver applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MPSA05
MPSA55
60
60
4.0
500
625
1.5
-65 to +150
200
83.3
MPSA06
MPSA56
80
80
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICES
VCE=60V
BVCEO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
fT
fT
IC=1.0mA (MPSA05, 55)
IC=1.0mA (MPSA06, 56)
IE=100μA
IC=100mA, IB=10mA
VCE=1.0V, IC=100mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
JC
MIN
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
MAX
100
100
UNITS
nA
nA
V
V
V
60
80
4.0
0.25
1.2
100
100
100
50
V
V
VCE=2.0V, IC=10mA, f=100MHz (NPN)
VCE=1.0V, IC=100mA, f=100MHz (PNP)
MHz
MHz
R8 (7-December 2015)
MPSA05 MPSA06
MPSA55 MPSA56
NPN
PNP
COMPLEMENTARY
SILICON TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TYPICAL ELECTRICAL CHARACTERISTICS
R8 (7-December 2015)
w w w. c e n t r a l s e m i . c o m
MPSA05 MPSA06
MPSA55 MPSA56
NPN
PNP
COMPLEMENTARY
SILICON TRANSISTORS
NPN TYPICAL ELECTRICAL CHARACTERISTICS
R8 (7-December 2015)
w w w. c e n t r a l s e m i . c o m
MPSA05 MPSA06
MPSA55 MPSA56
NPN
PNP
COMPLEMENTARY
SILICON TRANSISTORS
PNP TYPICAL ELECTRICAL CHARACTERISTICS
R8 (7-December 2015)
w w w. c e n t r a l s e m i . c o m
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
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If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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