D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
MPSA92, MPSA93
High Voltage Transistors
PNP Silicon
Features
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MPSA93
MPSA92
Collector
−Base
Voltage
MPSA93
MPSA92
Emitter
−Base
Voltage
Collector Current
−
Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
−200
−300
−200
−300
−5.0
−500
625
5.0
1.5
12
−55
to
+150
Unit
Vdc
http://onsemi.com
V
CBO
Vdc
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
TO−92
(TO−226AA)
CASE 29−11
V
EBO
I
C
P
D
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
MPS
A9x
AYWWG
G
P
D
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
x
= 2 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
July, 2010
−
Rev. 6
1
Publication Order Number:
MPSA92/D
MPSA92, MPSA93
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 1)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
−200
Vdc, I
E
= 0)
(V
CB
=
−160
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−3.0
Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−30
mAdc, V
CE
=
−10
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
Base−Emitter Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
=
−20
Vdc, I
E
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
MPSA92
MPSA93
f
T
C
cb
50
−
MHz
pF
All Types
All Types
MPSA92
MPSA93
MPSA92
MPSA93
V
CE(sat)
h
FE
25
40
25
25
−
−
−
−
Vdc
−
MPSA92
MPSA93
MPSA92
MPSA93
MPSA92
MPSA93
V
(BR)CEO
−300
−200
−300
−200
−5.0
−
−
−
−
−
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
I
CBO
Vdc
mAdc
−
−
−
−0.25
−0.25
−0.1
I
EBO
mAdc
−
−
−
−0.5
−0.4
−0.9
V
BE(sat)
Vdc
−
−
6.0
8.0
http://onsemi.com
2
MPSA92, MPSA93
ORDERING INFORMATION
Device
MPSA92G
MPSA92RL1G
MPSA92RLRA
MPSA92RLRAG
MPSA92RLRMG
MPSA92RLRPG
MPSA92ZL1G
MPSA93G
MPSA93RLRMG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Box
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
5000 Units / Box
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
250
h FE , DC CURRENT GAIN
200
25°C
150
-55°C
100
50
0
0.1
1.0
I
C
, COLLECTOR CURRENT (mA)
10
100
T
J
= +125°C
V
CE
= 10 Vdc
Figure 1. DC Current Gain
http://onsemi.com
3
MPSA92, MPSA93
100
C
ib
@ 1MHz
f T, CURRENT-GAIN — BANDWIDTH (MHz)
150
130
110
90
70
50
30
10
1
3
5
11
13
15
7
9
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V
CE
= 20 Vdc
F = 20 MHz
17
19
21
C, CAPACITANCE (pF)
10
C
cb
@ 1MHz
1.0
0.1
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
Figure 3. Current−Gain
−
Bandwidth
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@
−55°C,
I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@
−55°C,
I
C
/I
B
= 10
V
BE(on)
@ 25°C, V
CE
= 10 V
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@
−55°C,
V
CE
= 10 V
Figure 4. ”ON” Voltages
1
I
C
, COLLECTOR CURRENT (A)
0.1
1.0 s
10 ms
0.01
0.001
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
http://onsemi.com
4